A 1-?W radiation-hard front-end in a 0.18-?m CMOS process for the MALTA2 monolithic sensor

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dc.authorid0000-0002-5533-9621en_US
dc.contributor.authorPiro, F.
dc.contributor.authorAllport, P.
dc.contributor.authorAsensi, I.
dc.contributor.authorBerdalovic, I.
dc.contributor.authorBortoletto, D.
dc.contributor.authorOyulmaz, Kaan Yüksel
dc.date.accessioned2023-09-20T13:32:07Z
dc.date.available2023-09-20T13:32:07Z
dc.date.issued2022en_US
dc.departmentBAİBÜ, Lisansüstü Eğitim Enstitüsü, Fen Bilimleri, Fizik Ana Bilim Dalıen_US
dc.descriptionThis work was supported by the European Unions Horizon 2020 Research and Innovation Program under Grant 675587 and Grant 101004761.en_US
dc.description.abstractIn this article, a low-power, radiation-hard front-end circuit for monolithic pixel sensors, designed to meet the requirements of low noise and low pixel-to-pixel variability, the key features to achieve high detection efficiencies, is presented. The sensor features a small collection electrode to achieve a small capacitance (<5 fF) and allows full CMOS in-pixel circuitry. The circuit is implemented in the 180-nm CMOS imaging technology from the TowerJazz foundry and integrated into the MALTA2 chip, which is part of a development that targets the specifications of the outer pixel layer of the ATLAS Inner Tracker upgrade at the LHC. One of the main challenges for monolithic sensors is a radiation hardness up to 10(15) 1-MeV n(eq)/cm(2) non-ionizing energy loss (NIEL) and 80 Mrad total ionizing dose (TID) required for this application. Tests up to 3 . 10(15) 1-MeV n(eq)/cm(2) and 100 Mrad were performed on the MALTA2 sensor and front-end circuit, which still show good performance even after these levels of irradiation, promising for even more demanding applications such as the future experiments at the high-luminosity large hadron collider (HL-LHC).en_US
dc.description.sponsorshipEuropean Unions Horizon 2020 Research and Innovation Program [675587, 101004761]; Marie Curie Actions (MSCA) [675587] Funding Source: Marie Curie Actions (MSCA)en_US
dc.identifier.citationPiro, F., Allport, P., Asensi, I., Berdalovic, I., Bortoletto, D., Buttar, C., ... & Worm, S. (2022). A 1-μw radiation-hard front-end in a 0.18-μm cmos process for the Malta2 monolithic sensor. IEEE Transactions on Nuclear Science, 69(6), 1299-1309.en_US
dc.identifier.doi10.1109/TNS.2022.3170729
dc.identifier.endpage1309en_US
dc.identifier.issn0018-9499
dc.identifier.issn1558-1578
dc.identifier.issue6en_US
dc.identifier.scopus2-s2.0-85129650453en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage1299en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TNS.2022.3170729
dc.identifier.urihttps://hdl.handle.net/20.500.12491/11719
dc.identifier.volume69en_US
dc.identifier.wosWOS:000812532100017en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorOyulmaz, Kaan Yüksel
dc.language.isoenen_US
dc.publisherIEEE-Institute Electrical Electronics Engineers Incen_US
dc.relation.ispartofIEEE Transactions on Nuclear Sciencesen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectFront-End Circuitsen_US
dc.subjectMonolithic Active Pixel Sensors (MAPSs)en_US
dc.subjectPixel Detectorsen_US
dc.subjectRadiation Hardnessen_US
dc.subjectActıve Pixel Sensorsen_US
dc.subjectDetectorsen_US
dc.titleA 1-?W radiation-hard front-end in a 0.18-?m CMOS process for the MALTA2 monolithic sensoren_US
dc.typeArticleen_US

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