A 1-?W radiation-hard front-end in a 0.18-?m CMOS process for the MALTA2 monolithic sensor

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Küçük Resim

Tarih

2022

Dergi Başlığı

Dergi ISSN

Cilt Başlığı

Yayıncı

IEEE-Institute Electrical Electronics Engineers Inc

Erişim Hakkı

info:eu-repo/semantics/openAccess

Özet

In this article, a low-power, radiation-hard front-end circuit for monolithic pixel sensors, designed to meet the requirements of low noise and low pixel-to-pixel variability, the key features to achieve high detection efficiencies, is presented. The sensor features a small collection electrode to achieve a small capacitance (<5 fF) and allows full CMOS in-pixel circuitry. The circuit is implemented in the 180-nm CMOS imaging technology from the TowerJazz foundry and integrated into the MALTA2 chip, which is part of a development that targets the specifications of the outer pixel layer of the ATLAS Inner Tracker upgrade at the LHC. One of the main challenges for monolithic sensors is a radiation hardness up to 10(15) 1-MeV n(eq)/cm(2) non-ionizing energy loss (NIEL) and 80 Mrad total ionizing dose (TID) required for this application. Tests up to 3 . 10(15) 1-MeV n(eq)/cm(2) and 100 Mrad were performed on the MALTA2 sensor and front-end circuit, which still show good performance even after these levels of irradiation, promising for even more demanding applications such as the future experiments at the high-luminosity large hadron collider (HL-LHC).

Açıklama

This work was supported by the European Unions Horizon 2020 Research and Innovation Program under Grant 675587 and Grant 101004761.

Anahtar Kelimeler

Front-End Circuits, Monolithic Active Pixel Sensors (MAPSs), Pixel Detectors, Radiation Hardness, Actıve Pixel Sensors, Detectors

Kaynak

IEEE Transactions on Nuclear Sciences

WoS Q Değeri

Q2

Scopus Q Değeri

Q2

Cilt

69

Sayı

6

Künye

Piro, F., Allport, P., Asensi, I., Berdalovic, I., Bortoletto, D., Buttar, C., ... & Worm, S. (2022). A 1-μw radiation-hard front-end in a 0.18-μm cmos process for the Malta2 monolithic sensor. IEEE Transactions on Nuclear Science, 69(6), 1299-1309.