Performance improvement of GaN-based microdisk lasers by using a PEALD-SiO2 passivation layer

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dc.authorid0000-0002-6652-4662en_US
dc.contributor.authorZhao, Hanru
dc.contributor.authorFeng, Meixin
dc.contributor.authorLiu, Jianxun
dc.contributor.authorSun, Xiujian
dc.contributor.authorLi, Yongjian
dc.contributor.authorYılmaz, Ercan
dc.date.accessioned2024-05-31T10:55:19Z
dc.date.available2024-05-31T10:55:19Z
dc.date.issued2023en_US
dc.departmentBAİBÜ, Fen Edebiyat Fakültesi, Fizik Bölümüen_US
dc.descriptionNational Key Research and Development Program of China (2021YFB3601600, 2022YFB2802801, 2022YFB3604300, 2022YFB3604802); Guangdong Province Key-Area Research and Development Program (2019B090904002, 2019B090909004, 2019B090917005, 2020B010174004); National Natural Science Foundation of China (62074158, 62174174, 62274177, 62275263); Jiangxi Science and Technology Program (20212BDH80026); Strategic Priority Research Program of CAS (XDB43000000, XDB43020200); Key Research Program of Frontier Science, Chinese Academy of Sciences (ZDBS-LY-JSC040); Bureau of International Cooperation, Chinese Academy of Sciences (121E32KYSB20210002); Key R & amp;D Program of Jiangsu Province (BE2020004-2, BE2021051); Natural Science Foundation of Jiangsu Province (BK20220291); Science and Technology Program of Suzhou (SJC2021002, SYC2022089); Basic and Applied Basic Research Foundation of Guangdong Province (2021A1515110325, 2022A1515110482); Scientific and Technological Research Council of Turkey (2568); CAS Bilateral Cooperation Program (121N784).en_US
dc.description.abstractDry-etching is often utilized to shape GaN-based materials. However, it inevitably causes plenty of sidewall defects as non-radiative recombination centers and charge traps that deteriorate GaN-based device performance. In this study, the effects of dielectric films deposited by plasma-enhanced atomic layer deposition (PEALD) and plasma-enhanced chemical vapor deposition (PECVD) on GaN-based microdisk laser performance were both investigated. The results demonstrated that the PEALD-SiO2 passivation layer largely reduced the trap-state density and increased the non-radiative recombination lifetime, thus leading to the significantly decreased threshold current, notably enhanced luminescence efficiency and smaller size dependence of GaN-based microdisk lasers as compared with the PECVD-Si3N4 passivation layer.en_US
dc.description.sponsorshipNational Key Research and Development Program of China [2021YFB3601600, 2022YFB2802801, 2022YFB3604300, 2022YFB3604802]; Guangdong Province Key-Area Research and Development Program [2019B090904002, 2019B090909004, 2019B090917005, 2020B010174004]; National Natural Science Foundation of China [62074158, 62174174, 62274177, 62275263]; Jiangxi Science and Technology Program [20212BDH80026]; Strategic Priority Research Program of CAS [XDB43000000, XDB43020200]; Key Research Program of Frontier Science, Chinese Academy of Sciences [ZDBS-LY-JSC040]; Bureau of International Cooperation, Chinese Academy of Sciences [121E32KYSB20210002]; Key Ramp;D Program of Jiangsu Province [BE2020004-2, BE2021051]; Natural Science Foundation of Jiangsu Province [BK20220291]; Science and Technology Program of Suzhou [SJC2021002, SYC2022089]; Basic and Applied Basic Research Foundation of Guangdong Province [2021A1515110325, 2022A1515110482]; Scientific and Technological Research Council of Turkey [2568]; CAS Bilateral Cooperation Program [121N784]en_US
dc.identifier.citationZhao, H., Feng, M., Liu, J., Sun, X., Li, Y., Wu, X., ... & Yang, H. (2023). Performance improvement of GaN-based microdisk lasers by using a PEALD-SiO 2 passivation layer. Optics Express, 31(12), 20212-20220.en_US
dc.identifier.doi10.1364/OE.493849
dc.identifier.endpage20220en_US
dc.identifier.issn1094-4087
dc.identifier.issue12en_US
dc.identifier.pmid37381420en_US
dc.identifier.scopus2-s2.0-85163699621en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage20212en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OE.493849
dc.identifier.urihttps://hdl.handle.net/20.500.12491/12192
dc.identifier.volume31en_US
dc.identifier.wosWOS:001026153100003en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.indekslendigikaynakPubMeden_US
dc.institutionauthorYılmaz, Ercan
dc.language.isoenen_US
dc.publisherOptica Publishing Groupen_US
dc.relation.ispartofOptics Expressen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectSien_US
dc.subjectEfficiencyen_US
dc.subjectDry-etchingen_US
dc.subjectPEALDen_US
dc.subjectPEALD-SiO2en_US
dc.subjectGaN-baseden_US
dc.titlePerformance improvement of GaN-based microdisk lasers by using a PEALD-SiO2 passivation layeren_US
dc.typeArticleen_US

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