Performance improvement of GaN-based microdisk lasers by using a PEALD-SiO2 passivation layer
Yükleniyor...
Dosyalar
Tarih
2023
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Optica Publishing Group
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
Dry-etching is often utilized to shape GaN-based materials. However, it inevitably causes plenty of sidewall defects as non-radiative recombination centers and charge traps that deteriorate GaN-based device performance. In this study, the effects of dielectric films deposited by plasma-enhanced atomic layer deposition (PEALD) and plasma-enhanced chemical vapor deposition (PECVD) on GaN-based microdisk laser performance were both investigated. The results demonstrated that the PEALD-SiO2 passivation layer largely reduced the trap-state density and increased the non-radiative recombination lifetime, thus leading to the significantly decreased threshold current, notably enhanced luminescence efficiency and smaller size dependence of GaN-based microdisk lasers as compared with the PECVD-Si3N4 passivation layer.
Açıklama
National Key Research and Development Program of China (2021YFB3601600, 2022YFB2802801, 2022YFB3604300, 2022YFB3604802); Guangdong Province Key-Area Research and Development Program (2019B090904002, 2019B090909004, 2019B090917005, 2020B010174004); National Natural Science Foundation of China (62074158, 62174174, 62274177, 62275263); Jiangxi Science and Technology Program (20212BDH80026); Strategic Priority Research Program of CAS (XDB43000000, XDB43020200); Key Research Program of Frontier Science, Chinese Academy of Sciences (ZDBS-LY-JSC040); Bureau of International Cooperation, Chinese Academy of Sciences (121E32KYSB20210002); Key R & amp;D Program of Jiangsu Province (BE2020004-2, BE2021051); Natural Science Foundation of Jiangsu Province (BK20220291); Science and Technology Program of Suzhou (SJC2021002, SYC2022089); Basic and Applied Basic Research Foundation of Guangdong Province (2021A1515110325, 2022A1515110482); Scientific and Technological Research Council of Turkey (2568); CAS Bilateral Cooperation Program (121N784).
Anahtar Kelimeler
Si, Efficiency, Dry-etching, PEALD, PEALD-SiO2, GaN-based
Kaynak
Optics Express
WoS Q Değeri
Q2
Scopus Q Değeri
Q1
Cilt
31
Sayı
12
Künye
Zhao, H., Feng, M., Liu, J., Sun, X., Li, Y., Wu, X., ... & Yang, H. (2023). Performance improvement of GaN-based microdisk lasers by using a PEALD-SiO 2 passivation layer. Optics Express, 31(12), 20212-20220.
