The deep investigation of annealing temperature and gamma irradiation on Al2O3/Yb2O3/Al2O3/n-Si (100) MOS-like structure

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dc.authorid0000-0002-5168-046Xen_US
dc.authorid0000-0002-6652-4662en_US
dc.contributor.authorMutale, Alex
dc.contributor.authorZulu, Mailes Chimwemwe C.
dc.contributor.authorYılmaz, Ercan
dc.date.accessioned2023-12-20T07:22:35Z
dc.date.available2023-12-20T07:22:35Z
dc.date.issued2023en_US
dc.departmentBAİBÜ, Lisansüstü Eğitim Enstitüsü, Fen Bilimleri, Fizik Ana Bilim Dalıen_US
dc.descriptionThis work is supported by the Presidency of Turkey,Presidency of Strategy and Budget under Contract Number; 2016K12-2834.en_US
dc.description.abstractIn this paper, we report the fabrication of Al/Al2O3/Yb2O3/Al2O3/n-Si (100) charge trapping memory device by RF magnetron sputtering technique. The structural and electrical properties of high-dielectric (k) materials at various annealing temperature have been systematically investigated. XRD analysis confirm that the thin fims were amorphous after annealing temperature above 200 degrees C. AFM shows that the root mean squared value increased with an increase in the annealing temperature. Electrical performance tests showed that annealing at lower temperature can lead to an improvement of electrical properties as shown by an increase in the memory window (Delta V-fb) and the capacitance value in the accumulation region. The Cs-137 gamma irradiation response on the device has also been studied at different doses of 4 Gy to 128 Gy with dose rate 491 Gy/h. The C-V curves slightly shifted towards the negative voltage side due to the generation of net positive oxide trapped charges(Delta N-ot) during radiation.en_US
dc.description.sponsorshipPresidency of Turkey, Presidency of Strategy and Budget [2016K12-2834]en_US
dc.identifier.citationMutale, A., Zulu, M. C., & Yilmaz, E. (2023). The deep investigation of annealing temperature and gamma irradiation on Al2O3/Yb2O3/Al2O3/n-Si (100) MOS-like structure. Journal of Materials Science: Materials in Electronics, 34(17), 1377.en_US
dc.identifier.doi10.1007/s10854-023-10731-0
dc.identifier.endpage17en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue17en_US
dc.identifier.scopus2-s2.0-85162219607en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage1en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s10854-023-10731-0
dc.identifier.urihttps://hdl.handle.net/20.500.12491/11907
dc.identifier.volume34en_US
dc.identifier.wosWOS:001010860200008en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorZulu, Mailes Chimwemwe C.
dc.institutionauthorYılmaz, Ercan
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Materials Science: Materials in Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - İdari Personel ve Öğrencien_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCharge Trapping Characteristicsen_US
dc.subjectCurrent-Conduction Mechanismen_US
dc.subjectElectrical Characteristicsen_US
dc.subjectAtomic-Layeren_US
dc.subjectThin-Filmen_US
dc.titleThe deep investigation of annealing temperature and gamma irradiation on Al2O3/Yb2O3/Al2O3/n-Si (100) MOS-like structureen_US
dc.typeArticleen_US

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