The deep investigation of annealing temperature and gamma irradiation on Al2O3/Yb2O3/Al2O3/n-Si (100) MOS-like structure

In this paper, we report the fabrication of Al/Al2O3/Yb2O3/Al2O3/n-Si (100) charge trapping memory device by RF magnetron sputtering technique. The structural and electrical properties of high-dielectric (k) materials at various annealing temperature have been systematically investigated. XRD analysis confirm that the thin fims were amorphous after annealing temperature above 200 degrees C. AFM shows that the root mean squared value increased with an increase in the annealing temperature. Electrical performance tests showed that annealing at lower temperature can lead to an improvement of electrical properties as shown by an increase in the memory window (Delta V-fb) and the capacitance value in the accumulation region. The Cs-137 gamma irradiation response on the device has also been studied at different doses of 4 Gy to 128 Gy with dose rate 491 Gy/h. The C-V curves slightly shifted towards the negative voltage side due to the generation of net positive oxide trapped charges(Delta N-ot) during radiation.