The deep investigation of annealing temperature and gamma irradiation on Al2O3/Yb2O3/Al2O3/n-Si (100) MOS-like structure
Yükleniyor...
Dosyalar
Tarih
2023
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In this paper, we report the fabrication of Al/Al2O3/Yb2O3/Al2O3/n-Si (100) charge trapping memory device by RF magnetron sputtering technique. The structural and electrical properties of high-dielectric (k) materials at various annealing temperature have been systematically investigated. XRD analysis confirm that the thin fims were amorphous after annealing temperature above 200 degrees C. AFM shows that the root mean squared value increased with an increase in the annealing temperature. Electrical performance tests showed that annealing at lower temperature can lead to an improvement of electrical properties as shown by an increase in the memory window (Delta V-fb) and the capacitance value in the accumulation region. The Cs-137 gamma irradiation response on the device has also been studied at different doses of 4 Gy to 128 Gy with dose rate 491 Gy/h. The C-V curves slightly shifted towards the negative voltage side due to the generation of net positive oxide trapped charges(Delta N-ot) during radiation.
Açıklama
This work is supported by the Presidency of Turkey,Presidency of Strategy and Budget under Contract Number; 2016K12-2834.
Anahtar Kelimeler
Charge Trapping Characteristics, Current-Conduction Mechanism, Electrical Characteristics, Atomic-Layer, Thin-Film
Kaynak
Journal of Materials Science: Materials in Electronics
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
34
Sayı
17
Künye
Mutale, A., Zulu, M. C., & Yilmaz, E. (2023). The deep investigation of annealing temperature and gamma irradiation on Al2O3/Yb2O3/Al2O3/n-Si (100) MOS-like structure. Journal of Materials Science: Materials in Electronics, 34(17), 1377.
