Ultrahigh-Responsivity Ultraviolet Photodetectors Based on AlGaN/GaN Double-Channel High-Electron-Mobility Transistors

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dc.authoridSun sun, Qian qian/0000-0001-5495-2232
dc.authorid, Haodong Wang/0009-0005-5418-791X
dc.contributor.authorWang, Haodong
dc.contributor.authorFeng, Meixin
dc.contributor.authorZhong, Yaozong
dc.contributor.authorChen, Xin
dc.contributor.authorGao, Hongwei
dc.contributor.authorYilmaz, Ercan
dc.contributor.authorSun, Qian
dc.date.accessioned2024-09-25T19:58:37Z
dc.date.available2024-09-25T19:58:37Z
dc.date.issued2023
dc.departmentAbant İzzet Baysal Üniversitesien_US
dc.description.abstractIn this work, high-performance ultraviolet (UV) photodetectors (PDs) based on an AlGaN/GaN double-channel high-electron-mobility transistor (HEMT) were fabricated and investigated using 360 nm illumination. The design of the novel device structure introduces double two-dimensional electron gas channels, which remarkably improve the effectiveness in the collection of photo generated carriers and make it work as a two-terminal normally off device. The device exhibited a high responsivity of 2.1 x 10(7) A/W and a high specific detectivity of 1.7 x 10(15) Jones under the illumination of 9.7 mu W/cm(2), indicating the excellent capability of detecting an ultraweak signal. Meanwhile, a distinguished transient performance was also observed when it operated under 500 Hz pulse illumination. Combining fabrication conciseness and outstanding performance advantages, the proposed AlGaN/GaN double-channel HEMT UV PD shows promising potential in the development of next-generation UV PDs.en_US
dc.description.sponsorshipNano-X of SINANO, CASen_US
dc.description.sponsorshipThis work was technically supported by the Platform for Characterization and Test, Nano Fabrication Facility, and Nano-X of SINANO, CAS.en_US
dc.identifier.doi10.1021/acsphotonics.3c01261
dc.identifier.endpage186en_US
dc.identifier.issn2330-4022
dc.identifier.issue1en_US
dc.identifier.scopus2-s2.0-85181070628en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage180en_US
dc.identifier.urihttps://doi.org/10.1021/acsphotonics.3c01261
dc.identifier.urihttps://hdl.handle.net/20.500.12491/13666
dc.identifier.volume11en_US
dc.identifier.wosWOS:001144603000001en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorYang, Hui
dc.language.isoenen_US
dc.publisherAmer Chemical Socen_US
dc.relation.ispartofAcs Photonicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.snmzYK_20240925en_US
dc.subjectHEMTen_US
dc.subjecttwo-dimensional electron gasen_US
dc.subjectultravioletphotodetectorsen_US
dc.subjectdouble channelsen_US
dc.subjectpersistent photoconductivityeffecten_US
dc.titleUltrahigh-Responsivity Ultraviolet Photodetectors Based on AlGaN/GaN Double-Channel High-Electron-Mobility Transistorsen_US
dc.typeArticleen_US

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