Ultrahigh-Responsivity Ultraviolet Photodetectors Based on AlGaN/GaN Double-Channel High-Electron-Mobility Transistors
Küçük Resim Yok
Tarih
2023
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Amer Chemical Soc
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In this work, high-performance ultraviolet (UV) photodetectors (PDs) based on an AlGaN/GaN double-channel high-electron-mobility transistor (HEMT) were fabricated and investigated using 360 nm illumination. The design of the novel device structure introduces double two-dimensional electron gas channels, which remarkably improve the effectiveness in the collection of photo generated carriers and make it work as a two-terminal normally off device. The device exhibited a high responsivity of 2.1 x 10(7) A/W and a high specific detectivity of 1.7 x 10(15) Jones under the illumination of 9.7 mu W/cm(2), indicating the excellent capability of detecting an ultraweak signal. Meanwhile, a distinguished transient performance was also observed when it operated under 500 Hz pulse illumination. Combining fabrication conciseness and outstanding performance advantages, the proposed AlGaN/GaN double-channel HEMT UV PD shows promising potential in the development of next-generation UV PDs.
Açıklama
Anahtar Kelimeler
HEMT, two-dimensional electron gas, ultravioletphotodetectors, double channels, persistent photoconductivityeffect
Kaynak
Acs Photonics
WoS Q Değeri
Q1
Scopus Q Değeri
Q1
Cilt
11
Sayı
1
