Use of BiFeO3 layer as a dielectric in MOS based radiation sensors fabricated on a Si substrate

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dc.authorid0000-0001-8152-9122en_US
dc.authorid0000-0002-6652-4662
dc.contributor.authorKaya, Şenol
dc.contributor.authorYılmaz, Ercan
dc.date.accessioned2021-06-23T19:36:28Z
dc.date.available2021-06-23T19:36:28Z
dc.date.issued2014
dc.departmentBAİBÜ, Fen Edebiyat Fakültesi, Fizik Bölümüen_US
dc.description.abstractThe possible usage of BiFeO3 (bismuth ferrite) in MOS (metal-oxide-semiconductor) based radiation sensors was studied. Gamma radiation effects on the electrical characteristics of BiFeO3 MOS capacitors were investigated in detail. BiFeO3 thin films were deposited on p (100)-type silicon wafers with a thickness of 300 nm by magnetron sputtering. To examine their gamma irradiation response over a range of doses, the fabricated MOS capacitors were irradiated using a Co-60 gamma source from 0.5 to 16 Gray at a dose rate of 0.0030 Gy/s. Capacitance-Voltage measurements were recorded prior to and after irradiation and the effects of radiation were determined from the mid-gap and flat-band voltage shifts. The results show that BiFeO3 has a good response to gamma irradiation and can be used as a new material for future dielectric applications such as radiation sensors. (C) 2013 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.nimb.2013.10.016
dc.identifier.endpage170en_US
dc.identifier.issn0168-583X
dc.identifier.issn1872-9584
dc.identifier.scopus2-s2.0-84892366645en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage168en_US
dc.identifier.urihttps://doi.org/10.1016/j.nimb.2013.10.016
dc.identifier.urihttps://hdl.handle.net/20.500.12491/7999
dc.identifier.volume319en_US
dc.identifier.wosWOS:000331427900027en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorKaya, Şenol
dc.institutionauthorYılmaz, Ercan
dc.language.isoenen_US
dc.publisherElsevier Science Bven_US
dc.relation.ispartofNuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atomsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMultiferroic BiFeO3 MOS capacitorsen_US
dc.subjectInterface Statesen_US
dc.subjectOxide Trapped Chargesen_US
dc.subjectMultiferroic Radiation Sensorsen_US
dc.titleUse of BiFeO3 layer as a dielectric in MOS based radiation sensors fabricated on a Si substrateen_US
dc.typeArticleen_US

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