Use of BiFeO3 layer as a dielectric in MOS based radiation sensors fabricated on a Si substrate
Yükleniyor...
Dosyalar
Tarih
2014
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Science Bv
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The possible usage of BiFeO3 (bismuth ferrite) in MOS (metal-oxide-semiconductor) based radiation sensors was studied. Gamma radiation effects on the electrical characteristics of BiFeO3 MOS capacitors were investigated in detail. BiFeO3 thin films were deposited on p (100)-type silicon wafers with a thickness of 300 nm by magnetron sputtering. To examine their gamma irradiation response over a range of doses, the fabricated MOS capacitors were irradiated using a Co-60 gamma source from 0.5 to 16 Gray at a dose rate of 0.0030 Gy/s. Capacitance-Voltage measurements were recorded prior to and after irradiation and the effects of radiation were determined from the mid-gap and flat-band voltage shifts. The results show that BiFeO3 has a good response to gamma irradiation and can be used as a new material for future dielectric applications such as radiation sensors. (C) 2013 Elsevier B.V. All rights reserved.
Açıklama
Anahtar Kelimeler
Multiferroic BiFeO3 MOS capacitors, Interface States, Oxide Trapped Charges, Multiferroic Radiation Sensors
Kaynak
Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
319
