Investigation of RadFET response to X-ray and electron beams

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dc.authorid0000-0003-3180-600Xen_US
dc.authorid0000-0002-6652-4662
dc.authorid0000-0002-1836-7033
dc.contributor.authorYılmaz, Ercan
dc.contributor.authorKahraman, Ayşegül
dc.contributor.authorMcGarrigle, A. M.
dc.contributor.authorVasovic, Nikola
dc.contributor.authorYeğen, Dinçer
dc.date.accessioned2021-06-23T19:45:30Z
dc.date.available2021-06-23T19:45:30Z
dc.date.issued2017
dc.departmentBAİBÜ, Rektörlük, Nükleer Radyasyon Dedektörleri Uygulama ve Araştırma Merkezien_US
dc.description.abstractThe irradiation response of Radiation Sensing Field Effect Transistor (RadFET), also known as MOSFET/pMOS dosimeter, to high energy X-rays and electron beams was investigated. The threshold voltages before and after irradiation were measured and the trap densities in the gate oxide and oxide/silicon interface of the RadFETs are evaluated. The RadFETs were irradiated with 6 MV X-rays, and 10 and 18 MeV electron beams emitted from a Linear accelerator (LINAC). Linear and non-linear fits to experimental results showed that after an initial linear response up to several Gy, deviation from the linearity occurred due to electric field screening by the radiation induced oxide trapped charges. The radiation-induced fixed traps (FTs) and switching traps (STs) were analysed and the FT density was found to be higher than the ST density for all beam types and doses. The radiation response, fading characteristics, and variation of the trapped charges of the RadFETs showed similar behaviour in tests.en_US
dc.identifier.doi10.1016/j.apradiso.2017.06.004
dc.identifier.endpage160en_US
dc.identifier.issn0969-8043
dc.identifier.pmid28622597en_US
dc.identifier.scopus2-s2.0-85020637920en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage156en_US
dc.identifier.urihttps://doi.org/10.1016/j.apradiso.2017.06.004
dc.identifier.urihttps://hdl.handle.net/20.500.12491/9166
dc.identifier.volume127en_US
dc.identifier.wosWOS:000407535600024en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.indekslendigikaynakPubMeden_US
dc.institutionauthorYılmaz, Ercan
dc.language.isoenen_US
dc.publisherPergamon-Elsevier Science Ltden_US
dc.relation.ispartofApplied Radiation And Isotopesen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectX-rayen_US
dc.subjectElectron Beam
dc.subjectRadFET
dc.titleInvestigation of RadFET response to X-ray and electron beamsen_US
dc.typeArticleen_US

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