Investigation of annealing temperature and gamma irradiation on HfO2/Dy2O3/Al2O3/n-Si (100) memory capacitor

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dc.authorid0000-0003-0211-6675
dc.authorid0000-0002-5168-046X
dc.authorid0000-0002-6652-4662
dc.authorscopusid58763868300
dc.authorscopusid57216638517
dc.authorscopusid55914867700
dc.contributor.authorChirwa, Racheal
dc.contributor.authorMutale, Alex
dc.contributor.authorYılmaz, Ercan
dc.date.accessioned2024-09-25T19:42:52Z
dc.date.available2024-09-25T19:42:52Z
dc.date.issued2023
dc.departmentBAİBÜ, Lisansüstü Eğitim Enstitüsü, Fen Bilimleri, Fizik Ana Bilim Dalıen_US
dc.descriptionIEEE Electron Devices Society (EDS)en_US
dc.description33rd IEEE International Conference on Microelectronics, MIEL 2023 -- 16 October 2023 through 18 October 2023 -- Nis -- 194545en_US
dc.description.abstractThe effect of annealing temperature and gamma irradiation on Al/HfO2/Dy2O3/Al2O3/n-Si (100) tri-layer capacitors have been studied intensively. The HfO2/Dy2O3/Al2O3 were fabricated by using both RF magnetron sputtering and E-beam evaporation techniques, respectively. The samples were annealed at 300oC, 500oC,700oC, and 900oC in N2 ambient for 40min. The device annealed at 700oC had a large memory window of 8.22V under sweeping voltage ±12V compared to other annealed devices. This is attributed to the excellent charge storage capability of the device. Thereafter, this device was exposed to gamma irradiation at various doses of 4 Gy to 16 Gy. C-V and Gm/-V measurements were performed before and after irradiation at 1MHz. The C-V curves shifted toward the positive voltage side. This could be related to the oxide-trapped and interface-trapped charges generated during irradiation © 2023 IEEE.en_US
dc.identifier.doi10.1109/MIEL58498.2023.10315854
dc.identifier.endpage6
dc.identifier.isbn979-835034776-0
dc.identifier.scopus2-s2.0-85183817855en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.startpage1
dc.identifier.urihttps://doi.org/10.1109/MIEL58498.2023.10315854
dc.identifier.urihttps://hdl.handle.net/20.500.12491/12325
dc.indekslendigikaynakScopusen_US
dc.institutionauthorChirwa, Racheal
dc.institutionauthorMutale, Alex
dc.institutionauthorid0000-0002-5168-046X
dc.institutionauthorid0000-0002-6652-4662
dc.language.isoenen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.relation.ispartof2023 IEEE 33rd International Conference on Microelectronics, MIEL 2023en_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.snmzYK_20240925en_US
dc.subjectAnnealingen_US
dc.subjectGamma Raysen_US
dc.subjectHafnium Oxidesen_US
dc.subjectIrradiationen_US
dc.subjectAnnealing Temperaturesen_US
dc.subjectE Beam Evaporationen_US
dc.subjectEffect of Annealingen_US
dc.subjectGamma Irradiationen_US
dc.subjectMemory Windowen_US
dc.subjectN2 Ambienten_US
dc.subjectR. F. Magnetron Sputteringen_US
dc.subjectSi(1 0 0)en_US
dc.subjectSputtering Beamsen_US
dc.subjectTrilayersen_US
dc.subjectMagnetron Sputteringen_US
dc.titleInvestigation of annealing temperature and gamma irradiation on HfO2/Dy2O3/Al2O3/n-Si (100) memory capacitoren_US
dc.typeConference Objecten_US

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