Investigation of annealing temperature and gamma irradiation on HfO2/Dy2O3/Al2O3/n-Si (100) memory capacitor

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Tarih

2023

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Yayıncı

Institute of Electrical and Electronics Engineers Inc.

Erişim Hakkı

info:eu-repo/semantics/closedAccess

Özet

The effect of annealing temperature and gamma irradiation on Al/HfO2/Dy2O3/Al2O3/n-Si (100) tri-layer capacitors have been studied intensively. The HfO2/Dy2O3/Al2O3 were fabricated by using both RF magnetron sputtering and E-beam evaporation techniques, respectively. The samples were annealed at 300oC, 500oC,700oC, and 900oC in N2 ambient for 40min. The device annealed at 700oC had a large memory window of 8.22V under sweeping voltage ±12V compared to other annealed devices. This is attributed to the excellent charge storage capability of the device. Thereafter, this device was exposed to gamma irradiation at various doses of 4 Gy to 16 Gy. C-V and Gm/-V measurements were performed before and after irradiation at 1MHz. The C-V curves shifted toward the positive voltage side. This could be related to the oxide-trapped and interface-trapped charges generated during irradiation © 2023 IEEE.

Açıklama

IEEE Electron Devices Society (EDS)
33rd IEEE International Conference on Microelectronics, MIEL 2023 -- 16 October 2023 through 18 October 2023 -- Nis -- 194545

Anahtar Kelimeler

Annealing, Gamma Rays, Hafnium Oxides, Irradiation, Annealing Temperatures, E Beam Evaporation, Effect of Annealing, Gamma Irradiation, Memory Window, N2 Ambient, R. F. Magnetron Sputtering, Si(1 0 0), Sputtering Beams, Trilayers, Magnetron Sputtering

Kaynak

2023 IEEE 33rd International Conference on Microelectronics, MIEL 2023

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