Co-60 gamma irradiation influences on device characteristics of n-SnO2/p-Si heterojunction diodes

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dc.authorid0000-0003-1511-2219en_US
dc.authorid0000-0002-6652-4662en_US
dc.authorid0000-0001-8152-9122en_US
dc.contributor.authorKaya, Şenol
dc.contributor.authorAbubakar, Saleh
dc.contributor.authorYılmaz, Ercan
dc.date.accessioned2021-06-23T19:51:49Z
dc.date.available2021-06-23T19:51:49Z
dc.date.issued2019
dc.departmentBAİBÜ, Rektörlük, Nükleer Radyasyon Dedektörleri Uygulama ve Araştırma Merkezien_US
dc.description.abstractGamma irradiation induced modifications on the structural, morphological, and electrochemical characteristics of the n-SnO2/p-Si heterojunction diodes incorporating their influences on the electrical properties of diode have been systematically studied. The results indicate that irradiation exposure improves the crystallographic structure of the SnO2 layer as expected but, reduce the device capacitance due to changes in the dielectric characteristics of the SnO2. In addition, the surface roughness of the SnO2 thin films become smoother as the irradiation exposures enhanced. On the other hand, low dose irradiation exposure generates the local heating that neutralizes a portion of the dangling bonds which are especially close to the interface between SnO2 and Si. Hence, interface state density decreases after low dose irradiation exposure. However, high irradiation doses create a large number of oxygen vacancies and interstitial defect. These generated defect sites lead to changes on the barrier potential and conduction mechanism of the diode. It can be concluded that complex irradiation induced mechanism has been observed for SnO2/Si heterojunction diodes. Any irradiation-induced changes on the film structures and electrochemical parameters directly affect the electrical responses of the diodes.en_US
dc.identifier.doi10.1016/j.nimb.2019.03.013
dc.identifier.endpage68en_US
dc.identifier.issn0168-583X
dc.identifier.issn1872-9584
dc.identifier.scopus2-s2.0-85062727125en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage63en_US
dc.identifier.urihttps://doi.org/10.1016/j.nimb.2019.03.013
dc.identifier.urihttps://hdl.handle.net/20.500.12491/10051
dc.identifier.volume445en_US
dc.identifier.wosWOS:000463982800010en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorKaya, Şenol
dc.institutionauthorAbubakar, Saleh
dc.institutionauthorYılmaz, Ercan
dc.language.isoenen_US
dc.publisherElsevier Science Bven_US
dc.relation.ispartofNuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atomsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectHeterojunctionen_US
dc.subjectMicroelectronicsen_US
dc.subjectIonizing Radiationen_US
dc.subjectSnO2 Thin Filmen_US
dc.subjectRadiation Effecten_US
dc.subjectRadiation Degradationen_US
dc.subjectXPSen_US
dc.titleCo-60 gamma irradiation influences on device characteristics of n-SnO2/p-Si heterojunction diodesen_US
dc.typeArticleen_US

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