Co-60 gamma irradiation influences on device characteristics of n-SnO2/p-Si heterojunction diodes
Yükleniyor...
Dosyalar
Tarih
2019
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Science Bv
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Gamma irradiation induced modifications on the structural, morphological, and electrochemical characteristics of the n-SnO2/p-Si heterojunction diodes incorporating their influences on the electrical properties of diode have been systematically studied. The results indicate that irradiation exposure improves the crystallographic structure of the SnO2 layer as expected but, reduce the device capacitance due to changes in the dielectric characteristics of the SnO2. In addition, the surface roughness of the SnO2 thin films become smoother as the irradiation exposures enhanced. On the other hand, low dose irradiation exposure generates the local heating that neutralizes a portion of the dangling bonds which are especially close to the interface between SnO2 and Si. Hence, interface state density decreases after low dose irradiation exposure. However, high irradiation doses create a large number of oxygen vacancies and interstitial defect. These generated defect sites lead to changes on the barrier potential and conduction mechanism of the diode. It can be concluded that complex irradiation induced mechanism has been observed for SnO2/Si heterojunction diodes. Any irradiation-induced changes on the film structures and electrochemical parameters directly affect the electrical responses of the diodes.
Açıklama
Anahtar Kelimeler
Heterojunction, Microelectronics, Ionizing Radiation, SnO2 Thin Film, Radiation Effect, Radiation Degradation, XPS
Kaynak
Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
445
