Co-60 gamma radiation influences on the electrochemical, physical and electrical characteristics rare-earth dysprosium oxide (Dy2O3)

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dc.authorid0000-0002-6652-4662
dc.authorid0000-0001-8152-9122
dc.authorid0000-0001-7830-6243
dc.contributor.authorGürer, Umutcan
dc.contributor.authorYılmaz, Ozan
dc.contributor.authorKaraçalı, Hüseyin
dc.contributor.authorKaya, Şenol
dc.contributor.authorYılmaz, Ercan
dc.date.accessioned2021-06-23T19:54:10Z
dc.date.available2021-06-23T19:54:10Z
dc.date.issued2020
dc.departmentBAİBÜ, Lisansüstü Eğitim Enstitüsü, Fen Bilimleri, Fizik Ana Bilim Dalıen_US
dc.description.abstractDysprosium Oxide (Dy2O3) gate dielectric layers were deposited by Electron-Beam evaporation onto p-Si (100) wafers. The effects of gamma irradiation on the physical, electrochemical, and electrical properties of Dy2O3/p-Si thin films were investigated in detail. The evolutions on the crystallographic and morphologic characteristics of the films under gamma irradiation were analyzed by X-ray diffraction (XRD) and Atomic Force Microscopy (AFM), respectively; while irradiation effects on the electrochemistry of the films were characterized by X-ray photoelectron spectroscopy (XPS). Furthermore, variations on the electrical characteristics of Dy2O3/p-Si thin films were also specified by Capacitance-Voltage (C-V) and Conductance-Voltage (G/omega-V) measurements. No significant changes on the crystallographic orientation were observed after gamma irradiation exposures. However, the grain size of the films was increased slightly due to the local heating aggregated the smaller grains into a bigger cluster. In addition, the surface roughness was increased after irradiation indicating that deforms the films' surface morphology. The XPS analysis revealed that electrochemically two different phases exist in the virgin Dy2O3/p-Si thin films. These phases are Dysprosium sub-Oxide (DyxOy) and oxygen deficient in Dy2O3 films. After irradiation exposures, oxygen incorporation, vacancy, and interstitial defects formation were observed in the electrochemical characteristics of the films. On the other hand, the capacitance curves exhibit kinks in the region between depletion and accumulation due to the presence of the intermixing phases of Dy2O3 films. The capacitance of samples significantly increased with the increasing dose, which are correlated with the generated interface state density and/or improvement of dielectric characteristics of Dy2O3 owing to oxygen diffusion.en_US
dc.identifier.doi10.1016/j.radphyschem.2020.108684
dc.identifier.issn0969-806X
dc.identifier.issn1879-0895
dc.identifier.scopus2-s2.0-85077724468en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1016/j.radphyschem.2020.108684
dc.identifier.urihttps://hdl.handle.net/20.500.12491/10449
dc.identifier.volume171en_US
dc.identifier.wosWOS:000525947600025en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorGürer, Umutcan
dc.institutionauthorYılmaz, Ozan
dc.institutionauthorKaraçalı, Hüseyin
dc.institutionauthorKaya, Şenol
dc.institutionauthorYılmaz, Ercan
dc.language.isoenen_US
dc.publisherPergamon-Elsevier Science Ltden_US
dc.relation.ispartofRadiation Physics And Chemistryen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - İdari Personel ve Öğrencien_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMOS Capacitoren_US
dc.subjectHigh-k gate Dielectricen_US
dc.subjectRare Earth Oxidesen_US
dc.subjectDy2O3en_US
dc.subjectIrradiation Responseen_US
dc.titleCo-60 gamma radiation influences on the electrochemical, physical and electrical characteristics rare-earth dysprosium oxide (Dy2O3)en_US
dc.typeArticleen_US

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