Impact and origin of the oxide-interface traps in Al/Yb2O3/n-Si/Al on the electrical characteristics

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dc.contributor.authorKahraman, Ayşegül
dc.contributor.authorKaraçalı, Hüseyin
dc.contributor.authorYılmaz, Ercan
dc.date.accessioned2021-06-23T19:54:09Z
dc.date.available2021-06-23T19:54:09Z
dc.date.issued2020
dc.departmentBAİBÜ, Fen Edebiyat Fakültesi, Fizik Bölümüen_US
dc.description.abstractThis study presents comprehensive results on the changes of the crystal properties, surface morphology, chemical composition and bonding structures based on X-ray photoelectron spectroscopy (XPS) at different depths of the Yb2O3/Si as depending on post-deposition annealing (PDA) temperature. It also includes a detailed examination of the structural properties and the electrical characteristics of the Yb2O3 MOS capacitors. 125 nm-thick Yb2O3 thin films were deposited on n-Si by RF magnetron sputtering system and the Yb2O3/Si structures were annealed at 200 degrees C, 400 degrees C, 600 degrees C, 800 degrees C under nitrogen ambient. The largest grain size was obtained to be 17.3 nm from the sample annealed at 400 degrees C. The lowest roughness root-mean-square (R-q) value was measured as 0.464 nm in the Yb2O3 film annealed at 200 degrees C. Yb 4 d and O 1s spectra shifted to higher binding energies at Yb2O3/Si interface due to the approaching Si with high electronegativity. The peaks assigned to 2+ oxidation states were observed intensely at 400 degrees C and above due to the conversion of Yb3+-> Yb2+. The intensity of the bonded oxygen species in O 1s spectra measured at surface decreased with increasing annealing temperature, which may cause decreasing in the dielectric constant value. The Yb-O bond was mostly observed within the film, while Si-rich (positively charged interface traps) or Yb-rich (negatively charged interface traps) silicate layers (Yb-Si-O) were formed at the interface depending on the PDA temperature. It has been determined that the thickness of the silicate-like layer increases with PDA temperature, resulting in decreasing dielectric constant. The interface state density (N-ir) decreased with decreasing concentrations of Yb-Yb, Yb-Si and Si-Si at the interface. It was found that the presence of the Yb3+/Yb2+ ions within the film cause of negative oxide charge trapping and they were more active in the electric characteristics that the interface states. Whether the donor-like and acceptor-line interface states are active depending on the frequency makes it difficult to establish a link between the structural analyses and the electrical characteristics in some cases. The barrier height (phi(b)), dopant concentration (N-d), Fermi energy level (E-F) were determined depending on frequency. (C) 2020 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.jallcom.2020.154171
dc.identifier.issn0925-8388
dc.identifier.issn1873-4669
dc.identifier.scopus2-s2.0-85078973364en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.urihttps://doi.org/10.1016/j.jallcom.2020.154171
dc.identifier.urihttps://hdl.handle.net/20.500.12491/10441
dc.identifier.volume825en_US
dc.identifier.wosWOS:000514848600048en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorKaraçalı, Hüseyin
dc.institutionauthorYılmaz, Ercan
dc.language.isoenen_US
dc.publisherElsevier Science Saen_US
dc.relation.ispartofJournal Of Alloys And Compoundsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMOS interfaceen_US
dc.subjectThermal Annealingen_US
dc.subjectBondsen_US
dc.subjectBinding Energyen_US
dc.subjectOxide Trap Chargeen_US
dc.titleImpact and origin of the oxide-interface traps in Al/Yb2O3/n-Si/Al on the electrical characteristicsen_US
dc.typeArticleen_US

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