SPICE modeling of RADFETs with different gate oxide thicknesses

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dc.authorid0000-0003-0877-5348
dc.authorid0000-0002-6476-8639
dc.authorid0000-0002-6652-4662
dc.authorscopusid57188705368
dc.authorscopusid57203484057
dc.authorscopusid57217465423
dc.authorscopusid24823174100
dc.authorscopusid8542881100
dc.authorscopusid7004303305
dc.contributor.authorMarjanovic, M.
dc.contributor.authorGürer, Umutcan
dc.contributor.authorMitrovic, N.
dc.contributor.authorYılmaz, Ozan
dc.contributor.authorDankovic, D.
dc.contributor.authorBudak, Erhan
dc.contributor.authorYılmaz, Ercan
dc.date.accessioned2024-09-25T19:42:52Z
dc.date.available2024-09-25T19:42:52Z
dc.date.issued2023
dc.departmentBAİBÜ, Lisansüstü Eğitim Enstitüsü, Fen Bilimleri, Fizik Ana Bilim Dalıen_US
dc.descriptionIEEE Electron Devices Society (EDS)en_US
dc.description33rd IEEE International Conference on Microelectronics, MIEL 2023 -- 16 October 2023 through 18 October 2023 -- Nis -- 194545en_US
dc.description.abstractThis paper will present guidelines for creating a SPICE model of RADFETs with different gate oxide thicknesses. Model parameters, such as threshold voltage and carrier mobility, were extracted from the transfer characteristics in the saturation region. The model was satisfactorily used to simulate RADFETs with oxide thicknesses ranging from 40 nm to 300 nm. © 2023 IEEE.en_US
dc.description.sponsorshipNATO Science for Peace and Security, (G5974)en_US
dc.identifier.doi10.1109/MIEL58498.2023.10315808
dc.identifier.isbn979-835034776-0
dc.identifier.scopus2-s2.0-85183083250en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.urihttps://doi.org/10.1109/MIEL58498.2023.10315808
dc.identifier.urihttps://hdl.handle.net/20.500.12491/12324
dc.indekslendigikaynakScopusen_US
dc.institutionauthorYılmaz, Ozan
dc.institutionauthorYılmaz, Ercan
dc.institutionauthorGürer, Umutcan
dc.institutionauthorBudak, Erhan
dc.institutionauthorid0000-0003-0877-5348
dc.institutionauthorid0000-0002-6476-8639
dc.institutionauthorid0000-0002-6652-4662
dc.language.isoenen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.relation.ispartof2023 IEEE 33rd International Conference on Microelectronics, MIEL 2023en_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.snmzYK_20240925en_US
dc.subjectGates (Transistor)en_US
dc.subjectThreshold Voltageen_US
dc.subjectGate Oxide Thicknessen_US
dc.subjectModeling Parametersen_US
dc.subjectOxide Thicknessen_US
dc.subjectSaturation Regionen_US
dc.subjectSPICE Modelingen_US
dc.subjectTransfer Characteristicsen_US
dc.subjectSPICEen_US
dc.titleSPICE modeling of RADFETs with different gate oxide thicknessesen_US
dc.typeConference Objecten_US

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