SPICE modeling of RADFETs with different gate oxide thicknesses
Yükleniyor...
Dosyalar
Tarih
2023
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Institute of Electrical and Electronics Engineers Inc.
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
This paper will present guidelines for creating a SPICE model of RADFETs with different gate oxide thicknesses. Model parameters, such as threshold voltage and carrier mobility, were extracted from the transfer characteristics in the saturation region. The model was satisfactorily used to simulate RADFETs with oxide thicknesses ranging from 40 nm to 300 nm. © 2023 IEEE.
Açıklama
IEEE Electron Devices Society (EDS)
33rd IEEE International Conference on Microelectronics, MIEL 2023 -- 16 October 2023 through 18 October 2023 -- Nis -- 194545
33rd IEEE International Conference on Microelectronics, MIEL 2023 -- 16 October 2023 through 18 October 2023 -- Nis -- 194545
Anahtar Kelimeler
Gates (Transistor), Threshold Voltage, Gate Oxide Thickness, Modeling Parameters, Oxide Thickness, Saturation Region, SPICE Modeling, Transfer Characteristics, SPICE
Kaynak
2023 IEEE 33rd International Conference on Microelectronics, MIEL 2023
WoS Q Değeri
Scopus Q Değeri
N/A
