Effects of gamma-ray irradiation on interface states and series-resistance characteristics of BiFeO3 MOS capacitors

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dc.authorid0000-0001-8152-9122en_US
dc.authorid0000-0002-6652-4662
dc.authorid0000-0003-2239-295X
dc.contributor.authorKaya, Şenol
dc.contributor.authorAktağ, Aliekber
dc.contributor.authorYılmaz, Ercan
dc.date.accessioned2021-06-23T19:36:28Z
dc.date.available2021-06-23T19:36:28Z
dc.date.issued2014
dc.departmentBAİBÜ, Fen Edebiyat Fakültesi, Fizik Bölümüen_US
dc.description.abstractThe effects of radiation on the electrical-interface-state density (D-it) and series resistance (R-s) characteristics of BiFeO3 MOS capacitors were studied in this work. To study the response of MOS devices to gamma irradiation over a range of doses, MOS samples were irradiated using a Co-60 gamma-ray source from 0.5 to 16 grays at a dose rate of 0.0030 Gy/s. C-V and G/omega-V measurements were recorded prior to and after irradiation at high (1 MHz) frequency. The effects of the radiation were determined from analysis of the C-V and G/omega-V curves. A slightly decrease in the R, values with increasing irradiation dose was observed. The total interface-state density was found to decrease because of the reordering and restructuring of radiation-induced defects in the MOS capacitors. The experimental results indicate that the electrical R-s and D-it characteristics of BiFeO3 MOS capacitors depend on the gamma-irradiation dose, and the calculated densities of the interface states are on the order of 10(11) eV(-1) cm(-2). However, the calculated D-it values are not high enough to pin the Fermi level of the Si substrate and thereby corrupt device operation over the given dose range. (C) 2013 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.nimb.2013.11.006
dc.identifier.endpage47en_US
dc.identifier.issn0168-583X
dc.identifier.issn1872-9584
dc.identifier.scopus2-s2.0-84889652503en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage44en_US
dc.identifier.urihttps://doi.org/10.1016/j.nimb.2013.11.006
dc.identifier.urihttps://hdl.handle.net/20.500.12491/7998
dc.identifier.volume319en_US
dc.identifier.wosWOS:000331427900009en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorYılmaz, Ercan
dc.institutionauthorAktağ, Aliekber
dc.institutionauthorKaya, Şenol
dc.language.isoenen_US
dc.publisherElsevier Science Bven_US
dc.relation.ispartofNuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atomsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectRadiation Effectsen_US
dc.subjectFerroelectric BiFeO3 MOS Capacitoren_US
dc.subjectInterface Statesen_US
dc.subjectSeries Resistanceen_US
dc.titleEffects of gamma-ray irradiation on interface states and series-resistance characteristics of BiFeO3 MOS capacitorsen_US
dc.typeArticleen_US

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