Effects of gamma-ray irradiation on interface states and series-resistance characteristics of BiFeO3 MOS capacitors
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Dosyalar
Tarih
2014
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Science Bv
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The effects of radiation on the electrical-interface-state density (D-it) and series resistance (R-s) characteristics of BiFeO3 MOS capacitors were studied in this work. To study the response of MOS devices to gamma irradiation over a range of doses, MOS samples were irradiated using a Co-60 gamma-ray source from 0.5 to 16 grays at a dose rate of 0.0030 Gy/s. C-V and G/omega-V measurements were recorded prior to and after irradiation at high (1 MHz) frequency. The effects of the radiation were determined from analysis of the C-V and G/omega-V curves. A slightly decrease in the R, values with increasing irradiation dose was observed. The total interface-state density was found to decrease because of the reordering and restructuring of radiation-induced defects in the MOS capacitors. The experimental results indicate that the electrical R-s and D-it characteristics of BiFeO3 MOS capacitors depend on the gamma-irradiation dose, and the calculated densities of the interface states are on the order of 10(11) eV(-1) cm(-2). However, the calculated D-it values are not high enough to pin the Fermi level of the Si substrate and thereby corrupt device operation over the given dose range. (C) 2013 Elsevier B.V. All rights reserved.
Açıklama
Anahtar Kelimeler
Radiation Effects, Ferroelectric BiFeO3 MOS Capacitor, Interface States, Series Resistance
Kaynak
Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
319
