Effect of annealing temperature on the electrical characteristics of Al/Er2O3/n-Si/Al MOS capacitors

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dc.authorid0000-0002-5168-046X
dc.authorid0000-0002-6652-4662
dc.authorid0000-0002-9958-9809
dc.contributor.authorMutale, Alex
dc.contributor.authorDeevi, Seetharama C.
dc.contributor.authorYılmaz, Ercan
dc.date.accessioned2021-06-23T18:57:01Z
dc.date.available2021-06-23T18:57:01Z
dc.date.issued2021
dc.departmentBAİBÜ, Fen Edebiyat Fakültesi, Fizik Bölümüen_US
dc.description.abstractIn this work, Er2O3 films deposited by electron beam (E-beam) evaporation technique were annealed at 450 °C, 550 °C, and 650 °C in N2 atmosphere for 30 min. We then compared the electrical properties, the frequency dependency of the density of interface states, and series resistance of as-deposited and annealed Al/Er2O3/n-Si/Al MOS capacitors. The grain size measurements carried out by X-ray diffractometer (XRD) and the root mean square (RMS) surface roughness values obtained by atomic force microscopy (AFM) increased with an increase of annealing temperature. The C-V and G/?-V measurements were carried out at a frequency of 1 MHz for as-deposited and annealed MOS capacitors. The capacitance in the accumulation region decreased with an increase in annealing temperature, and the capacitor film annealed at 450 °C had the highest capacitance in the accumulation region as well as high-k value, and low barrier height. In addition, the C-V and G/?-V measurements carried out in the frequency range of 20 kHz to 1 MHz were analyzed to understand the effect of frequency on the series resistance Rs and interface states Dit. The measured and calculated results reveal a significant influence of frequency on both Rs and Dit of the fabricated MOS capacitor characteristics.en_US
dc.description.sponsorshipTUBITAK (Scientific and Technological Research Council of Turkey); [2016K12-2834]en_US
dc.description.sponsorshipTUBITAK (Scientific and Technological Research Council of Turkey)(Turkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK)
dc.identifier.doi10.1016/j.jallcom.2021.158718
dc.identifier.issn0925-8388
dc.identifier.issn1873-4669
dc.identifier.scopus2-s2.0-85099650494en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.urihttps://doi.org/10.1016/j.jallcom.2021.158718
dc.identifier.urihttps://hdl.handle.net/20.500.12491/5116
dc.identifier.volume863en_US
dc.identifier.wosWOS:000621714200084en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorYılmaz, Ercan
dc.institutionauthorMutale, Alex
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofJournal of Alloys and Compoundsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAFMen_US
dc.subjectBarrier Heighten_US
dc.subjectE-beam Depositionen_US
dc.subjectEr2O3 Thin Filmsen_US
dc.subjectHigh Dielectric Constant-ken_US
dc.subjectInterface Chargesen_US
dc.subjectPDAen_US
dc.subjectSeries Resistanceen_US
dc.subjectXRDen_US
dc.titleEffect of annealing temperature on the electrical characteristics of Al/Er2O3/n-Si/Al MOS capacitorsen_US
dc.typeArticleen_US

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