Effect of annealing temperature on the electrical characteristics of Al/Er2O3/n-Si/Al MOS capacitors

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Küçük Resim

Tarih

2021

Dergi Başlığı

Dergi ISSN

Cilt Başlığı

Yayıncı

Elsevier

Erişim Hakkı

info:eu-repo/semantics/closedAccess

Özet

In this work, Er2O3 films deposited by electron beam (E-beam) evaporation technique were annealed at 450 °C, 550 °C, and 650 °C in N2 atmosphere for 30 min. We then compared the electrical properties, the frequency dependency of the density of interface states, and series resistance of as-deposited and annealed Al/Er2O3/n-Si/Al MOS capacitors. The grain size measurements carried out by X-ray diffractometer (XRD) and the root mean square (RMS) surface roughness values obtained by atomic force microscopy (AFM) increased with an increase of annealing temperature. The C-V and G/?-V measurements were carried out at a frequency of 1 MHz for as-deposited and annealed MOS capacitors. The capacitance in the accumulation region decreased with an increase in annealing temperature, and the capacitor film annealed at 450 °C had the highest capacitance in the accumulation region as well as high-k value, and low barrier height. In addition, the C-V and G/?-V measurements carried out in the frequency range of 20 kHz to 1 MHz were analyzed to understand the effect of frequency on the series resistance Rs and interface states Dit. The measured and calculated results reveal a significant influence of frequency on both Rs and Dit of the fabricated MOS capacitor characteristics.

Açıklama

Anahtar Kelimeler

AFM, Barrier Height, E-beam Deposition, Er2O3 Thin Films, High Dielectric Constant-k, Interface Charges, PDA, Series Resistance, XRD

Kaynak

Journal of Alloys and Compounds

WoS Q Değeri

Q1

Scopus Q Değeri

Q1

Cilt

863

Sayı

Künye