Effect of annealing time on the structural, optical and electrical characteristics of DC sputtered ITO thin films

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dc.authorid0000-0001-8782-4608en_US
dc.authorid0000-0002-5322-963Xen_US
dc.contributor.authorŞenol, Sevim Demirözü
dc.contributor.authorŞenol, Abdulkadir
dc.contributor.authorÖztürk, Özgür
dc.contributor.authorErdem, Murat
dc.date.accessioned2021-06-23T19:35:22Z
dc.date.available2021-06-23T19:35:22Z
dc.date.issued2014
dc.departmentBAİBÜ, Fen Edebiyat Fakültesi, Kimya Bölümüen_US
dc.description.abstractUsing an Indium tin oxide (ITO) ceramic target (In2O3:SnO2, 90: 10 wt%), ITO thin films were deposited by conventional direct current magnetron sputtering technique onto glass substrates at room temperature. The obtained ITO films were annealed at 400 degrees C for different annealing times (1, 2, 5, 7, and 9 h). The effect of annealing time on their structural, optical and electrical properties was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microcopy (AFM), ultra violet-visible (UV-Vis) spectrometer, and temperature dependence Hall measurements. XRD data of obtained ITO films reveal that the films were polycrystalline with cubic structure and exhibit (222), (400) and (440) crystallographic planes of In2O3. AFM and Scanning Electron Microscopy SEM have been used to probe the surface roughness and the morphology of the films. The refractive index (n), thickness and porosity (%) of the films were evaluated from transmittance spectra obtained in the range 350-700 nm by UV-Vis. The optical band gap of ITO film was found to be varying from 3.35 to 3.47 eV with the annealing time. The annealing time dependence of resistivity, carrier concentration, carrier mobility, sheet resistance, and figure of merit values of the films at room temperature were discussed. The carrier concentration of the films increased from 1.21 x 10(20) to 1.90 x 10(20) cm(-3), the Hall mobility increased from 11.38 to 18 cm(2) V-1 s(-1) and electrical resistivity decreased from 3.97 x 10(-3) to 2.13 9 10(-3) Omega cm with the increase of annealing time from 1 to 9 h. Additionally, the temperature dependence of the carrier concentration, and carrier mobility for the as-deposited and 400 degrees C annealed ITO films for 2 and 9 h were analysed in the temperature range of 80-350 K.en_US
dc.identifier.doi10.1007/s10854-014-2262-y
dc.identifier.endpage4999en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue11en_US
dc.identifier.scopus2-s2.0-85027931741en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage4992en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-014-2262-y
dc.identifier.urihttps://hdl.handle.net/20.500.12491/7773
dc.identifier.volume25en_US
dc.identifier.wosWOS:000344808800041en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorŞenol, Sevim Demirözü
dc.institutionauthorErdem, Murat
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal Of Materials Science-Materials In Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleEffect of annealing time on the structural, optical and electrical characteristics of DC sputtered ITO thin filmsen_US
dc.typeArticleen_US

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