Effect of annealing time on the structural, optical and electrical characteristics of DC sputtered ITO thin films
Yükleniyor...
Tarih
2014
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Using an Indium tin oxide (ITO) ceramic target (In2O3:SnO2, 90: 10 wt%), ITO thin films were deposited by conventional direct current magnetron sputtering technique onto glass substrates at room temperature. The obtained ITO films were annealed at 400 degrees C for different annealing times (1, 2, 5, 7, and 9 h). The effect of annealing time on their structural, optical and electrical properties was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microcopy (AFM), ultra violet-visible (UV-Vis) spectrometer, and temperature dependence Hall measurements. XRD data of obtained ITO films reveal that the films were polycrystalline with cubic structure and exhibit (222), (400) and (440) crystallographic planes of In2O3. AFM and Scanning Electron Microscopy SEM have been used to probe the surface roughness and the morphology of the films. The refractive index (n), thickness and porosity (%) of the films were evaluated from transmittance spectra obtained in the range 350-700 nm by UV-Vis. The optical band gap of ITO film was found to be varying from 3.35 to 3.47 eV with the annealing time. The annealing time dependence of resistivity, carrier concentration, carrier mobility, sheet resistance, and figure of merit values of the films at room temperature were discussed. The carrier concentration of the films increased from 1.21 x 10(20) to 1.90 x 10(20) cm(-3), the Hall mobility increased from 11.38 to 18 cm(2) V-1 s(-1) and electrical resistivity decreased from 3.97 x 10(-3) to 2.13 9 10(-3) Omega cm with the increase of annealing time from 1 to 9 h. Additionally, the temperature dependence of the carrier concentration, and carrier mobility for the as-deposited and 400 degrees C annealed ITO films for 2 and 9 h were analysed in the temperature range of 80-350 K.
Açıklama
Anahtar Kelimeler
Kaynak
Journal Of Materials Science-Materials In Electronics
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
25
Sayı
11
