Effects of annealing temperature on electrical characteristics of sputtered Al/Al2O3/p-Si (MOS) capacitors

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dc.authorid0000-0002-6476-8639en_US
dc.authorid0000-0002-6652-4662en_US
dc.authorid0000-0001-8152-9122en_US
dc.contributor.authorKaya, Şenol
dc.contributor.authorBudak, Erhan
dc.contributor.authorYılmaz, Ercan
dc.date.accessioned2021-06-23T19:50:10Z
dc.date.available2021-06-23T19:50:10Z
dc.date.issued2018
dc.departmentBAİBÜ, Mehmet Tanrıkulu Sağlık Hizmetleri Meslek Yüksekokulu, Tıbbi Hizmetler ve Teknikler Bölümüen_US
dc.description.abstractThe aim of this study is to investigate annealing effects on the electrical characteristics of aluminum oxide (Al2O3) MOS capacitors. Chemical changes after annealing have been characterized using the Fourier transform infrared spectroscopy prior to detailed electrical investigation. The influence of annealing temperature on electrical characteristics has been investigated by capacitance-voltage (C-V) and conductance-voltage (G/omega-V) curves. Effective oxide trap density (N-ox), border trap densities (N-bt), and interface trap densities (N-it) were calculated during the electrical analysis. Remarkable changes in the measurements were observed depending on the annealing temperatures. The obtained results demonstrate that the optimum annealing temperature is 450 degrees C for the Al2O3-based devices.en_US
dc.identifier.doi10.3906/fiz-1805-1
dc.identifier.endpage477en_US
dc.identifier.issn1300-0101
dc.identifier.issn1303-6122
dc.identifier.issue4en_US
dc.identifier.scopus2-s2.0-85051502260en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage470en_US
dc.identifier.urihttps://doi.org/10.3906/fiz-1805-1
dc.identifier.urihttps://hdl.handle.net/20.500.12491/9718
dc.identifier.urihttps://journals.tubitak.gov.tr/physics/issues/fiz-18-42-4/fiz-42-4-13-1805-1.pdf
dc.identifier.volume42en_US
dc.identifier.wosWOS:000441595000013en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorKaya, Şenol
dc.institutionauthorYılmaz, Ercan
dc.language.isoenen_US
dc.publisherScientific Technical Research Council Turkey-Tubitaken_US
dc.relation.ispartofTurkish Journal Of Physicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectAl/Al2O3/p-Si (MOS) capacitorsen_US
dc.subjectAnnealing Effecten_US
dc.subjectInterface Statesen_US
dc.subjectSeries Resistanceen_US
dc.titleEffects of annealing temperature on electrical characteristics of sputtered Al/Al2O3/p-Si (MOS) capacitorsen_US
dc.typeArticleen_US

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