Effects of annealing temperature on electrical characteristics of sputtered Al/Al2O3/p-Si (MOS) capacitors
Yükleniyor...
Dosyalar
Tarih
2018
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Scientific Technical Research Council Turkey-Tubitak
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
The aim of this study is to investigate annealing effects on the electrical characteristics of aluminum oxide (Al2O3) MOS capacitors. Chemical changes after annealing have been characterized using the Fourier transform infrared spectroscopy prior to detailed electrical investigation. The influence of annealing temperature on electrical characteristics has been investigated by capacitance-voltage (C-V) and conductance-voltage (G/omega-V) curves. Effective oxide trap density (N-ox), border trap densities (N-bt), and interface trap densities (N-it) were calculated during the electrical analysis. Remarkable changes in the measurements were observed depending on the annealing temperatures. The obtained results demonstrate that the optimum annealing temperature is 450 degrees C for the Al2O3-based devices.
Açıklama
Anahtar Kelimeler
Al/Al2O3/p-Si (MOS) capacitors, Annealing Effect, Interface States, Series Resistance
Kaynak
Turkish Journal Of Physics
WoS Q Değeri
N/A
Scopus Q Değeri
Q3
Cilt
42
Sayı
4
