Microstructural and electrical characterizations of transparent Er-doped ZnO nano thin films prepared by sol-gel process

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dc.authorid0000-0003-0722-3891en_US
dc.authorid0000-0002-0391-5551
dc.authorid0000-0002-3944-0367
dc.contributor.authorAşıkuzun, Elif
dc.contributor.authorÖztürk, Özgür
dc.contributor.authorArda, Lütfi
dc.contributor.authorTerzioğlu, Cabir
dc.date.accessioned2021-06-23T19:45:22Z
dc.date.available2021-06-23T19:45:22Z
dc.date.issued2017
dc.departmentBAİBÜ, Fen Edebiyat Fakültesi, Fizik Bölümüen_US
dc.description.abstractIn this study, rare earth element (Er) doped ZnO nano thin films which have dual structure of (Zn1-xErx)O (x = 0.0, 0.01, 0.02, 0.03, 0.04 and 0.05) are prepared by using sol-gel method. The microstructure and electrical properties of prepared nano thin films are investigated. Nano thin films are coated on the glass substrate by using the dip coating method. The films are annealed at 600 A degrees C for 30 min. The X-ray diffractometer (XRD), scanning electron microscopy and atomic force microscopy are used to determine the structural properties such as crystal structures, grain sizes, surface morphology; Hall effect measurements system is used to investigate the electrical properties of materials. XRD results showed that all Er doped nano thin films have a hexagonal structure and (002) orientation. Surface morphologies of ZnErO thin films are denser and more uniform than the undoped ZnO thin film. According to the Hall effect measurements, the resistivity of the films decreased with increasing Er concentration from to and then slightly increased at .en_US
dc.identifier.doi10.1007/s10854-017-7291-x
dc.identifier.endpage14322en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue19en_US
dc.identifier.scopus2-s2.0-85025082890en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage14314en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-017-7291-x
dc.identifier.urihttps://hdl.handle.net/20.500.12491/9143
dc.identifier.volume28en_US
dc.identifier.wosWOS:000410729300030en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorAşıkuzun, Elif
dc.institutionauthorTerzioğlu, Cabir
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal Of Materials Science-Materials In Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSol-Gel Processen_US
dc.subjectZnO Nano Thin Films
dc.subjectElectrical Characterization
dc.titleMicrostructural and electrical characterizations of transparent Er-doped ZnO nano thin films prepared by sol-gel processen_US
dc.typeArticleen_US

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