Microstructural and electrical characterizations of transparent Er-doped ZnO nano thin films prepared by sol-gel process
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Dosyalar
Tarih
2017
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In this study, rare earth element (Er) doped ZnO nano thin films which have dual structure of (Zn1-xErx)O (x = 0.0, 0.01, 0.02, 0.03, 0.04 and 0.05) are prepared by using sol-gel method. The microstructure and electrical properties of prepared nano thin films are investigated. Nano thin films are coated on the glass substrate by using the dip coating method. The films are annealed at 600 A degrees C for 30 min. The X-ray diffractometer (XRD), scanning electron microscopy and atomic force microscopy are used to determine the structural properties such as crystal structures, grain sizes, surface morphology; Hall effect measurements system is used to investigate the electrical properties of materials. XRD results showed that all Er doped nano thin films have a hexagonal structure and (002) orientation. Surface morphologies of ZnErO thin films are denser and more uniform than the undoped ZnO thin film. According to the Hall effect measurements, the resistivity of the films decreased with increasing Er concentration from to and then slightly increased at .
Açıklama
Anahtar Kelimeler
Sol-Gel Process, ZnO Nano Thin Films, Electrical Characterization
Kaynak
Journal Of Materials Science-Materials In Electronics
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
28
Sayı
19
