Enhanced breakdown voltage and dynamic performance of GaN HEMTs with AlN/GaN superlattice buffer

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dc.authorid0000-0002-6652-4662en_US
dc.contributor.authorChen, Xin
dc.contributor.authorZhong, Yaozong
dc.contributor.authorYan, Shumeng
dc.contributor.authorGuo, Xiaolu
dc.contributor.authorGao, Hongwei
dc.contributor.authorYılmaz, Ercan
dc.date.accessioned2024-02-08T08:21:24Z
dc.date.available2024-02-08T08:21:24Z
dc.date.issued2023en_US
dc.departmentBAİBÜ, Fen Edebiyat Fakültesi, Fizik Bölümüen_US
dc.descriptionThe authors are grateful for the financial support from the National Key R&D Program of China (Grant Nos. 2022YFB3604300, 2021YFB3601600, 2022YFB3604802, and 2022YFB2802801), the Guangdong Province Key-Area Research and Development Program (Grant Nos. 2019B090917005, 2020B010174004, 2019B090904002, and 2019B090909004), the Guangdong Basic and Applied Basic Research Foundation (Grant Nos. 2021A1515110325 and 2022A1515110482) the Natural Science Foundation of China (Grant Nos. 62074158, 62275263, 62274177 and 62174174), the Jiangxi Science and Technology Program (Grant No. 20212BDH80026), the Strategic Priority Research Program of CAS (Grant Nos. XDB43000000 and XDB43020200), the Key Research Program of Frontier Sciences, CAS (Grant No. ZDBS-LY-JSC040), the Bureau of International Cooperation, CAS (Grant No. 121E32KYSB20210002), the Key R&D Program of Jiangsu Province (Grant Nos. BE2021051 and BE2020004-2), the Natural Science Foundation of Jiangsu Province (Grant No. BK20220291), the Suzhou Science and Technology Program (Grant Nos. SJC2021002 and SYC2022089), the Scientific and Technological Research Council of Turkey (Grant No. 2568) and CAS Bilateral Cooperation Program (Grant No. 121N784). We are thankful for the technical support from Nano Fabrication Facility, Platform for Characterization and Test, and Nano-X of SINANO, CASen_US
dc.description.abstractThe characteristics of an AlGaN/GaN high-electron-mobility transistor buffer structure are studied and optimized by employing an AlN/GaN superlattice (SL) structure. Through vertical leakage analysis and back-gate measurement, combined with Silvaco-TCAD simulation, the influence of buffer trapson the carrier transport behaviors and electrical performance for SL buffer structures under a high electric field is analyzed. The AlN/GaN SL buffer structures are further optimized with various AlN/GaN thickness ratios and their total thickness through both simulation and experimental studies. As a result, a high breakdown voltage of up to 1.3 kV with a maximum breakdown electric field of 2.8 MV cm(-1) has been achieved. Moreover, the buffer trapping effect is dramatically suppressed, leading to a minimum drop of channel current for the optimized sample, in which donor traps are found to play a positive role in the device dynamic characteristics.en_US
dc.description.sponsorshipNational Key R&D Program of China [2022YFB3604300, 2021YFB3601600, 2022YFB3604802, 2022YFB2802801]; Guangdong Province Key-Area Research and Development Program [2019B090917005, 2020B010174004, 2019B090904002, 2019B090909004]; Guangdong Basic and Applied Basic Research Foundation [2021A1515110325, 2022A1515110482]; Natural Science Foundation of China [62074158, 62275263, 62274177, 62174174]; Jiangxi Science and Technology Program [20212BDH80026]; Strategic Priority Research Program of CAS [XDB43000000, XDB43020200]; Key Research Program of Frontier Sciences, CAS [ZDBS-LY-JSC040]; Bureau of International Cooperation, CAS [121E32KYSB20210002]; Key R&D Program of Jiangsu Province [BE2021051, BE2020004-2]; Natural Science Foundation of Jiangsu Province [BK20220291]; Suzhou Science and Technology Program [SJC2021002, SYC2022089]; Scientific and Technological Research Council of Turkey [2568]; CAS Bilateral Cooperation Program [121N784]en_US
dc.identifier.citationChen, X., Zhong, Y., Yan, S., Guo, X., Gao, H., Sun, X., ... & Yang, H. (2023). Enhanced breakdown voltage and dynamic performance of GaN HEMTs with AlN/GaN superlattice buffer. Journal of Physics D: Applied Physics, 56(35), 355101.en_US
dc.identifier.doi10.1088/1361-6463/acd069
dc.identifier.endpage9en_US
dc.identifier.issn0022-3727
dc.identifier.issn1361-6463
dc.identifier.issue35en_US
dc.identifier.scopus2-s2.0-85160554827en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage1en_US
dc.identifier.urihttp://dx.doi.org/10.1088/1361-6463/acd069
dc.identifier.urihttps://hdl.handle.net/20.500.12491/11993
dc.identifier.volume56en_US
dc.identifier.wosWOS:000994580600001en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorYılmaz, Ercan
dc.language.isoenen_US
dc.publisherIOP Publishing Ltden_US
dc.relation.ispartofJournal of Physics D-Applied Physicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectGallium Nitride (GaN)en_US
dc.subjectSuperlattice Bufferen_US
dc.subjectBreakdownen_US
dc.subjectTrappingen_US
dc.subjectHigh-Electron-Mobility Transistor (HEMT)en_US
dc.subjectSIen_US
dc.titleEnhanced breakdown voltage and dynamic performance of GaN HEMTs with AlN/GaN superlattice bufferen_US
dc.typeArticleen_US

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