Enhanced breakdown voltage and dynamic performance of GaN HEMTs with AlN/GaN superlattice buffer
Yükleniyor...
Dosyalar
Tarih
2023
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
IOP Publishing Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The characteristics of an AlGaN/GaN high-electron-mobility transistor buffer structure are studied and optimized by employing an AlN/GaN superlattice (SL) structure. Through vertical leakage analysis and back-gate measurement, combined with Silvaco-TCAD simulation, the influence of buffer trapson the carrier transport behaviors and electrical performance for SL buffer structures under a high electric field is analyzed. The AlN/GaN SL buffer structures are further optimized with various AlN/GaN thickness ratios and their total thickness through both simulation and experimental studies. As a result, a high breakdown voltage of up to 1.3 kV with a maximum breakdown electric field of 2.8 MV cm(-1) has been achieved. Moreover, the buffer trapping effect is dramatically suppressed, leading to a minimum drop of channel current for the optimized sample, in which donor traps are found to play a positive role in the device dynamic characteristics.
Açıklama
The authors are grateful for the financial support from the National Key R&D Program of China (Grant Nos. 2022YFB3604300, 2021YFB3601600, 2022YFB3604802, and 2022YFB2802801), the Guangdong Province Key-Area Research and Development Program (Grant Nos. 2019B090917005, 2020B010174004, 2019B090904002, and 2019B090909004), the Guangdong Basic and Applied Basic Research Foundation (Grant Nos. 2021A1515110325 and 2022A1515110482) the Natural Science Foundation of China (Grant Nos. 62074158, 62275263, 62274177 and 62174174), the Jiangxi Science and Technology Program (Grant No. 20212BDH80026), the Strategic Priority Research Program of CAS (Grant Nos. XDB43000000 and XDB43020200), the Key Research Program of Frontier Sciences, CAS (Grant No. ZDBS-LY-JSC040), the Bureau of International Cooperation, CAS (Grant No. 121E32KYSB20210002), the Key R&D Program of Jiangsu Province (Grant Nos. BE2021051 and BE2020004-2), the Natural Science Foundation of Jiangsu Province (Grant No. BK20220291), the Suzhou Science and Technology Program (Grant Nos. SJC2021002 and SYC2022089), the Scientific and Technological Research Council of Turkey (Grant No. 2568) and CAS Bilateral Cooperation Program (Grant No. 121N784). We are thankful for the technical support from Nano Fabrication Facility, Platform for Characterization and Test, and Nano-X of SINANO, CAS
Anahtar Kelimeler
Gallium Nitride (GaN), Superlattice Buffer, Breakdown, Trapping, High-Electron-Mobility Transistor (HEMT), SI
Kaynak
Journal of Physics D-Applied Physics
WoS Q Değeri
Q2
Scopus Q Değeri
Q1
Cilt
56
Sayı
35
Künye
Chen, X., Zhong, Y., Yan, S., Guo, X., Gao, H., Sun, X., ... & Yang, H. (2023). Enhanced breakdown voltage and dynamic performance of GaN HEMTs with AlN/GaN superlattice buffer. Journal of Physics D: Applied Physics, 56(35), 355101.
