Fabrication and characterization of resistance temperature detector by smart mask design

The purpose of this study is to give detailed information about fabrication and characterization of resistance temperature detector by smart mask design. The effects of annealing on both structural and electrical properties were investigated. Changes in microstrain, lattice parameter and grain size values were observed by means of annealing. It has been shown that the structural changes cause a decrease in resistivity and sheet resistance values. Thousands of sensors can be fabricated according to the substrate size of thin film RTD produced. It is almost impossible to fabricate thousands of sensors with the same resistance value. But by the agency of the smart mask design proposed in this study, it is possible to adjust each RTD to the same resistance value by using the resistance adjustment points. Maximum TCR value was found to be around 3.98 × 10–3 at 0 0C. This value is very close to the standard TCR value 3.90 × 10–3 at 0 0C used for industrial applications.