Effects of post deposition annealing, interface states and series resistance on electrical characteristics of HfO2 MOS capacitors

dc.authorid0000-0001-8152-9122en_US
dc.authorid0000-0003-2239-295X
dc.authorid0000-0002-6652-4662
dc.authorid0000-0002-1836-7033
dc.contributor.authorKahraman, Ayşegül
dc.contributor.authorYılmaz, Ercan
dc.contributor.authorKaya, Şenol
dc.contributor.authorAktağ, Aliekber
dc.date.accessioned2021-06-23T19:37:29Z
dc.date.available2021-06-23T19:37:29Z
dc.date.issued2015
dc.departmentBAİBÜ, Rektörlük, Nükleer Radyasyon Dedektörleri Uygulama ve Araştırma Merkezien_US
dc.description.abstractThe purposes of this paper are to investigate the post deposition annealing (PDA) effect on structural and electrical characterizations of HfO2 MOS capacitor and the frequency dependency of series resistance and interface states in this device. PDA processes on the HfO2 films deposited using RF magnetron sputtering system were performed in N-2 ambient at 350, 550, 650, and 750 A degrees C. The phase identifications and crystallization degrees of the HfO2 films were determined by using X-ray diffractometry. The grain size of the films was varied from 4.5 to 15.23 with increasing in PDA temperature. The HfO2 MOS capacitors were fabricated using the as-deposited and annealed films for electrical characterization. C-V and G/omega-V measurements were performed at 1 MHz frequency. The C-V characteristics of the MOS capacitor fabricated with film annealed at 550 A degrees C show a better behaviour in terms of the high dielectric constant and low effective oxide charge compared to others. For this device, C-V and G/omega-V measurements were performed in different frequencies ranging from 10 kHz to 1 MHz at room temperature. Obtained results show that series resistance and interface states strongly influence the C-V and G/omega-V behaviour of the MOS capacitor.en_US
dc.identifier.doi10.1007/s10854-015-3492-3
dc.identifier.endpage8284en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue11en_US
dc.identifier.scopus2-s2.0-84943366864en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage8277en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-015-3492-3
dc.identifier.urihttps://hdl.handle.net/20.500.12491/8168
dc.identifier.volume26en_US
dc.identifier.wosWOS:000362663300004en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorYılmaz, Ercan
dc.institutionauthorKahraman, Ayşegül
dc.institutionauthorKaya, Şenol
dc.institutionauthorAktağ, Aliekber
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal Of Materials Science-Materials In Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleEffects of post deposition annealing, interface states and series resistance on electrical characteristics of HfO2 MOS capacitorsen_US
dc.typeArticleen_US

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
İsim:
aysegul-kahraman.pdf
Boyut:
769.98 KB
Biçim:
Adobe Portable Document Format
Açıklama:
Tam metin/Full text