Thermal hysteresis and memory effects in TlInS2

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dc.contributor.authorAllakhverdiev, Kerim R.
dc.contributor.authorMikailov, F. A.
dc.contributor.authorKulibekov, A. M.
dc.contributor.authorTüretken, Naif
dc.date.accessioned2021-06-23T19:17:15Z
dc.date.available2021-06-23T19:17:15Z
dc.date.issued1998
dc.departmentBAİBÜ, Fen Edebiyat Fakültesi, Fizik Bölümüen_US
dc.description.abstractThe dielectric susceptibility of layered TlInS2 was studied in the temperature range of successive phase transitions. Thermal hysteresis was observed in the incommensurate phase. It was shown that after annealing the crystal at a fixed temperature within the incommensurate phase, the existing temperature interval of this phase reveals noticeable broadening. The thermal memory effect is discussed using a defect density wave model.en_US
dc.identifier.doi10.1080/01411599808228753
dc.identifier.endpage465en_US
dc.identifier.issn0141-1594
dc.identifier.issue2en_US
dc.identifier.scopus2-s2.0-0032269417en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage457en_US
dc.identifier.urihttps://doi.org/10.1080/01411599808228753
dc.identifier.urihttps://hdl.handle.net/20.500.12491/5317
dc.identifier.volume67en_US
dc.identifier.wosWOS:000079806100005en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorTüretken, Naif
dc.language.isoenen_US
dc.publisherGordon Breach Sci Publ Ltden_US
dc.relation.ispartofPhase Transitionsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectThermal Hysteresisen_US
dc.subjectMemory Effectsen_US
dc.subjectSemiconductorsen_US
dc.subjectFerroelectricsen_US
dc.subjectPhase Transitionsen_US
dc.subjectDielectric Responseen_US
dc.titleThermal hysteresis and memory effects in TlInS2en_US
dc.typeArticleen_US

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