Thermal hysteresis and memory effects in TlInS2
Yükleniyor...
Tarih
1998
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Gordon Breach Sci Publ Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The dielectric susceptibility of layered TlInS2 was studied in the temperature range of successive phase transitions. Thermal hysteresis was observed in the incommensurate phase. It was shown that after annealing the crystal at a fixed temperature within the incommensurate phase, the existing temperature interval of this phase reveals noticeable broadening. The thermal memory effect is discussed using a defect density wave model.
Açıklama
Anahtar Kelimeler
Thermal Hysteresis, Memory Effects, Semiconductors, Ferroelectrics, Phase Transitions, Dielectric Response
Kaynak
Phase Transitions
WoS Q Değeri
Q3
Scopus Q Değeri
Q3
Cilt
67
Sayı
2
