Structural and electrical characterizations of BiFeO3 capacitors deposited by sol-gel dip coating technique

Basit Öğe Kaydı
dc.authorid0000-0002-6476-8639en_US
dc.authorid0000-0002-6652-4662
dc.authorid0000-0003-2239-295X
dc.authorid0000-0001-8152-9122
dc.authorid0000-0002-6476-8639
dc.contributor.authorÇetinkaya, Ali Osman
dc.contributor.authorKaya, Şenol
dc.contributor.authorAktağ, Aliekber
dc.contributor.authorBudak, Erhan
dc.contributor.authorYılmaz, Ercan
dc.date.accessioned2021-06-23T19:41:56Z
dc.date.available2021-06-23T19:41:56Z
dc.date.issued2015
dc.departmentBAİBÜ, Fen Edebiyat Fakültesi, Fizik Bölümüen_US
dc.description.abstractBismuth ferrite (BiFeO3) thin films were deposited by sol-gel dip coating (SGDC) technique on Si-P(100) and glass substrates to investigate the structural and electrical characteristics. The aluminum (Al) metal contacts were formed on the samples deposited on the Si-P(100) to fabricate metal-oxide-semiconductor (MOS) capacitors. The fabricated MOS structures were characterized electrically by capacitance-voltage (C-V) and conductance- voltage (G/omega-V) measurements. The structural characterizations were performed by X-ray diffraction technique and scanning electron microscopy. The compositions of the films were investigated by energydispersive X-ray spectroscopy. The results exhibit that pure rhombohedral perovskite phase films were fabricatedwithout any elemental contamination. Average grain sizes of the BiFeO3 deposited on silicon and glass wafers were found to be about 34,50 and 30,00 nm, respectively. In addition, while the thin films deposited on glass substrate exhibit porous surface, those deposited on Si-P(100) wafers exhibit dense microstructure with a homogenous surface. Moreover, the C-V and G/omega-V characteristics are sensitive to applied voltage frequency due to frequency dependent charges (N-ss) and series resistance (R-s). The peak values of R-s have been decreased from 2,6 k Omega to 40 Omega, while N-ss is varied from 6,57 x 10(12) to 3,68 x 10(12) eV(-1) cm(-2) with increasing in frequency. Consequently, pure phase polycrystalline BiFeO3 thin films were fabricated successfully by SGDC technique and BiFeO3 dielectric layer exhibits stable insulation characteristics. (C) 2015 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.tsf.2015.07.053
dc.identifier.endpage12en_US
dc.identifier.issn0040-6090
dc.identifier.scopus2-s2.0-84941357985en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage7en_US
dc.identifier.urihttps://doi.org/10.1016/j.tsf.2015.07.053
dc.identifier.urihttps://hdl.handle.net/20.500.12491/8241
dc.identifier.volume590en_US
dc.identifier.wosWOS:000361057100002en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorÇetinkaya, Ali Osman
dc.institutionauthorKaya, Şenol
dc.institutionauthorAktağ, Aliekber
dc.institutionauthorBudak, Erhan
dc.institutionauthorYılmaz, Ercan
dc.language.isoenen_US
dc.publisherElsevier Science Saen_US
dc.relation.ispartofThin Solid Filmsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectBismuth Ferriteen_US
dc.subjectSol-Gel Depositionen_US
dc.subjectMetal-Oxide-Semiconductor Capacitorsen_US
dc.subjectSemiconductorsen_US
dc.subjectOxides Interface Statesen_US
dc.titleStructural and electrical characterizations of BiFeO3 capacitors deposited by sol-gel dip coating techniqueen_US
dc.typeArticleen_US

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
İsim:
ali-osman-cetinkaya.pdf
Boyut:
1.09 MB
Biçim:
Adobe Portable Document Format
Açıklama:
Tam metin/Full text
İndir

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Fizik Bölümü Koleksiyonu
Kimya Bölümü Koleksiyonu
Nükleer Radyasyon Dedektörleri Uygulama ve Araştırma Merkezi
Scopus İndeksli Yayınlar Koleksiyonu