Structural and electrical characterizations of BiFeO3 capacitors deposited by sol-gel dip coating technique
Yükleniyor...
Tarih
2015
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Science Sa
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Bismuth ferrite (BiFeO3) thin films were deposited by sol-gel dip coating (SGDC) technique on Si-P(100) and glass substrates to investigate the structural and electrical characteristics. The aluminum (Al) metal contacts were formed on the samples deposited on the Si-P(100) to fabricate metal-oxide-semiconductor (MOS) capacitors. The fabricated MOS structures were characterized electrically by capacitance-voltage (C-V) and conductance- voltage (G/omega-V) measurements. The structural characterizations were performed by X-ray diffraction technique and scanning electron microscopy. The compositions of the films were investigated by energydispersive X-ray spectroscopy. The results exhibit that pure rhombohedral perovskite phase films were fabricatedwithout any elemental contamination. Average grain sizes of the BiFeO3 deposited on silicon and glass wafers were found to be about 34,50 and 30,00 nm, respectively. In addition, while the thin films deposited on glass substrate exhibit porous surface, those deposited on Si-P(100) wafers exhibit dense microstructure with a homogenous surface. Moreover, the C-V and G/omega-V characteristics are sensitive to applied voltage frequency due to frequency dependent charges (N-ss) and series resistance (R-s). The peak values of R-s have been decreased from 2,6 k Omega to 40 Omega, while N-ss is varied from 6,57 x 10(12) to 3,68 x 10(12) eV(-1) cm(-2) with increasing in frequency. Consequently, pure phase polycrystalline BiFeO3 thin films were fabricated successfully by SGDC technique and BiFeO3 dielectric layer exhibits stable insulation characteristics. (C) 2015 Elsevier B.V. All rights reserved.
Açıklama
Anahtar Kelimeler
Bismuth Ferrite, Sol-Gel Deposition, Metal-Oxide-Semiconductor Capacitors, Semiconductors, Oxides Interface States
Kaynak
Thin Solid Films
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
590
