Effects of interfacial layer on the electrical properties of n-ZnO/p-Si heterojunction diodes between 260 and 340K

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dc.authorid0000-0001-8152-9122en_US
dc.authorid0000-0002-6652-4662
dc.contributor.authorKaya, Şenol
dc.contributor.authorYılmaz, Ercan
dc.date.accessioned2021-06-23T19:51:24Z
dc.date.available2021-06-23T19:51:24Z
dc.date.issued2019
dc.departmentBAİBÜ, Fen Edebiyat Fakültesi, Fizik Bölümüen_US
dc.description.abstractElectrical characteristics and transport properties of n-ZnO/p-Si heterojunction diodes were investigated by current-voltage (I-V) measurements between 260 and 340K. The ZnO layer was deposited onto p-Si substrate via RF sputtering and the films were annealed at 673K and 973K, separately. X-ray diffraction analyses indicate that the both the films are highly oriented along (002) plane. Fourier-transform infrared spectroscopy measurements demonstrate that an interfacial layer (IL) is formed after 973K annealing. The rectifying behavior of the diodes annealed at 673K is better than the diodes annealed at 973K due to the well interface and oxide quality. Saturation current (I-o), barrier height (phi(b)) and ideality factor (n) markedly vary with ambient temperature. The I-o of the diodes annealed at 973K is higher than the diodes annealed at 673K which may be attributed to different activation energies of the defects. The phi(b) values of the diodes annealed at 973K significantly decrease, while the n values increase as compared to the diodes annealed at 673K at the same ambient temperature. Forward bias I-V curves suggest that the current conduction can be approximated to space charge limited current transport between 340 and 300K, while defect assisted tunneling becomes more dominant to carrier conduction between 300K and 260K for the diodes annealed at 673K. On the other hand, the tunneling transport dominates the current conduction of the diodes annealed at 973K at all ambient temperatures. The obtained results have depicted that presence of the parasitic IL significantly degrades the electrical performance of diodes.en_US
dc.identifier.doi10.1007/s10854-019-01575-8
dc.identifier.endpage12179en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue13en_US
dc.identifier.scopus2-s2.0-85068747097en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage12170en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-019-01575-8
dc.identifier.urihttps://hdl.handle.net/20.500.12491/9980
dc.identifier.volume30en_US
dc.identifier.wosWOS:000475587800035en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorYılmaz, Ercan
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal Of Materials Science-Materials In Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectn‑ZnO/p‑Sien_US
dc.subjectNon-stoichiometric
dc.titleEffects of interfacial layer on the electrical properties of n-ZnO/p-Si heterojunction diodes between 260 and 340Ken_US
dc.typeArticleen_US

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