Effects of interfacial layer on the electrical properties of n-ZnO/p-Si heterojunction diodes between 260 and 340K
Yükleniyor...
Dosyalar
Tarih
2019
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Electrical characteristics and transport properties of n-ZnO/p-Si heterojunction diodes were investigated by current-voltage (I-V) measurements between 260 and 340K. The ZnO layer was deposited onto p-Si substrate via RF sputtering and the films were annealed at 673K and 973K, separately. X-ray diffraction analyses indicate that the both the films are highly oriented along (002) plane. Fourier-transform infrared spectroscopy measurements demonstrate that an interfacial layer (IL) is formed after 973K annealing. The rectifying behavior of the diodes annealed at 673K is better than the diodes annealed at 973K due to the well interface and oxide quality. Saturation current (I-o), barrier height (phi(b)) and ideality factor (n) markedly vary with ambient temperature. The I-o of the diodes annealed at 973K is higher than the diodes annealed at 673K which may be attributed to different activation energies of the defects. The phi(b) values of the diodes annealed at 973K significantly decrease, while the n values increase as compared to the diodes annealed at 673K at the same ambient temperature. Forward bias I-V curves suggest that the current conduction can be approximated to space charge limited current transport between 340 and 300K, while defect assisted tunneling becomes more dominant to carrier conduction between 300K and 260K for the diodes annealed at 673K. On the other hand, the tunneling transport dominates the current conduction of the diodes annealed at 973K at all ambient temperatures. The obtained results have depicted that presence of the parasitic IL significantly degrades the electrical performance of diodes.
Açıklama
Anahtar Kelimeler
n‑ZnO/p‑Si, Non-stoichiometric
Kaynak
Journal Of Materials Science-Materials In Electronics
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
30
Sayı
13
