Development of MOS-FET dosimeters for use in high radiation fields

dc.authorid0000-0002-6652-4662
dc.authorid0000-0001-7830-6243
dc.contributor.authorKramberger, G.
dc.contributor.authorAmbrozic, K.
dc.contributor.authorGürer, Umutcan
dc.contributor.authorHiti, B.
dc.contributor.authorKaraçalı, Hüseyin
dc.contributor.authorMandic, I
dc.contributor.authorYılmaz, Ercan
dc.contributor.authorYılmaz, Ozan
dc.date.accessioned2021-06-23T19:53:52Z
dc.date.available2021-06-23T19:53:52Z
dc.date.issued2020
dc.departmentBAİBÜ, Lisansüstü Eğitim Enstitüsü, Fen Bilimleri, Fizik Ana Bilim Dalıen_US
dc.description.abstractSeveral sets of MOS-FET dosimeters dedicated for use in high dose environments at particle physics experiments and nuclear reactors were produced by NURDAM. Various oxide thicknesses ranging from 40 nm to 800 nm were employed to study sensitivity and dynamic range of the dosimeters. The sensors were exposed to ionization doses up to almost 700 kGy of reactor gamma-rays in two different ways; several sets of sensors were exposed in steps to fixed doses and read out in-between, while one set was continuously measured during the irradiations. A calibrated ionization cell in combination with precise simulation of the radiation environment in the reactor was used to accurately determine the dose received by the sensors. The agreement between sets of samples irradiated in different irradiation channels, hence dose rates, and different readout schemes was found to be very good. The dependence of the threshold voltage on the received dose was characterized over the entire range of doses. Sensitivity, dynamic range, saturation and breakdown voltages of sensors were investigated. After the irradiations, isothermal annealing at various temperatures took place to determine the sensor response over the extended periods of time in low dose rate fields.en_US
dc.identifier.doi10.1016/j.nima.2020.164283
dc.identifier.issn0168-9002
dc.identifier.issn1872-9576
dc.identifier.scopus2-s2.0-85088389598en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.urihttps://doi.org/10.1016/j.nima.2020.164283
dc.identifier.urihttps://hdl.handle.net/20.500.12491/10303
dc.identifier.volume978en_US
dc.identifier.wosWOS:000564678100014en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorGürer, Umutcan
dc.institutionauthorYılmaz, Ercan
dc.institutionauthorKaraçalı, Hüseyin
dc.institutionauthorYılmaz, Ozan
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofNuclear Instruments & Methods In Physics Research Section A-Accelerators Spectrometers Detectors And Associated Equipmenten_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectDosimeteren_US
dc.subjectMOS-FETen_US
dc.subjectOxide Chargeen_US
dc.titleDevelopment of MOS-FET dosimeters for use in high radiation fieldsen_US
dc.typeArticleen_US

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