The Co-60 gamma-ray irradiation effects on the Al/HfSiO4/p-Si/Al MOS capacitors

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dc.authorid0000-0001-8152-9122en_US
dc.authorid0000-0001-7830-6243
dc.authorid0000-0002-6652-4662
dc.contributor.authorLök, Ramazan
dc.contributor.authorKaya, Şenol
dc.contributor.authorKaraçalı, Hüseyin
dc.contributor.authorYılmaz, Ercan
dc.date.accessioned2021-06-23T19:45:05Z
dc.date.available2021-06-23T19:45:05Z
dc.date.issued2017
dc.departmentBAİBÜ, Rektörlük, Nükleer Radyasyon Dedektörleri Uygulama ve Araştırma Merkezien_US
dc.description.abstractIn this work, the initial interface trap density (N-it) to examine device compability for microelectronics and then the Co-60 gamma irradiation responses of Al/HfSiO4/p-Si/Al (MOS) capacitors were investigated in various dose ranges up to 70 Gy. Pre-irradiation response of the devices was evaluated from high frequency (HF) and low frequency (LF) capacitance method and the N-it was calculated as 9.91 x 10(11) cm(-2) which shows that the HfSiO4/p-Si interface quality is convenient for microelectronics applications. The irradiation responses of the devices were carried out from flat-band and mid-gap voltage shifts obtained from stretch of capacitance characteristics prior to and after irradiation. The results show that the flat band voltages very slightly shifted to positive voltage values demonstrating the enhancement of negative charge trapping in device structure. The sensitivity of the Al/HfSiO4/p-Si/Al MOS capacitors was found to be 4.41 mV/Gy for 300 nm-thick HfSiO4 gate dielectrics. This value approximately 6.5 times smaller compared to the same thickness conventional SiO2 based MOS devices. Therefore, HfSiO4 exhibits crucial irradiation tolerance in gamma irradiation environment. Consequently, HfSiO4 dielectrics may have significant usage for microelectronic technology as a radiation hard material where radiation field exists such as in space applications.en_US
dc.identifier.doi10.1016/j.radphyschem.2017.06.019
dc.identifier.endpage159en_US
dc.identifier.issn0969-806X
dc.identifier.scopus2-s2.0-85021949453en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage155en_US
dc.identifier.urihttps://doi.org/10.1016/j.radphyschem.2017.06.019
dc.identifier.urihttps://hdl.handle.net/20.500.12491/9096
dc.identifier.volume141en_US
dc.identifier.wosWOS:000412607700023en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorLök, Ramazan
dc.institutionauthorKaya, Şenol
dc.institutionauthorKaraçalı, Hüseyin
dc.institutionauthorYılmaz, Ercan
dc.language.isoenen_US
dc.publisherPergamon-Elsevier Science Ltden_US
dc.relation.ispartofRadiation Physics And Chemistryen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectHfSiO4 MOS Capacitorsen_US
dc.subjectIrradiation Hard Materialen_US
dc.subjectInterface Statesen_US
dc.subjectOxide Trapped Chargesen_US
dc.subjectHigh-ken_US
dc.titleThe Co-60 gamma-ray irradiation effects on the Al/HfSiO4/p-Si/Al MOS capacitorsen_US
dc.typeArticleen_US

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