Structural characterization and electrical properties of Nd2O3 by sol-gel method

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dc.authorid0000-0002-6476-8639en_US
dc.authorid0000-0002-6652-4662
dc.contributor.authorLök, Ramazan
dc.contributor.authorBudak, Erhan
dc.contributor.authorYılmaz, Ercan
dc.date.accessioned2021-06-23T19:54:36Z
dc.date.available2021-06-23T19:54:36Z
dc.date.issued2020
dc.departmentBAİBÜ, Rektörlük, Nükleer Radyasyon Dedektörleri Uygulama ve Araştırma Merkezien_US
dc.description.abstractIn the current study, Neodymium oxide (Nd2O3) was prepared by sol-gel method and deposited on P-type < 100 > silicon wafer. The chemical characterization of samples was done by Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive spectra (EDS) and atomic force microscopy (AFM). Nd-O bond formation was proven by FTIR, also cubic- Nd2O3 (c-Nd2O3) phase was detected by XRD. According to EDS analysis, neodymium concentration was approximately 59.41% while oxygen concentration was calculated as 10.21%. The amount of excess oxygen was 9.45% was originated by cristobalite formation. In addition, electrical characterizations of Nd2O3/p-Si MOS capacitor was performed by capacitance-voltage (C-V), conductance-voltage G/omega-V measurements at different frequencies between 250 kHz and 1 MHz. The maximum value of measured capacitance-voltage (C-V) and conductance-voltage (G/omega-V) was increased with decreasing in the applied voltage frequencies and after series resistance (R-s) correction, the measured C-V and G/omega-V characteristics, G/omega behavior started to decrease with rising the frequencies. According to the observed frequency dispersion, the deposited Nd2O3 on P-type < 100 & rang; silicon exhibits stable insulation property for future microelectronic applications.en_US
dc.identifier.doi10.1007/s10854-020-02857-2
dc.identifier.endpage3118en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue4en_US
dc.identifier.scopus2-s2.0-85077721920en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage3111en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-020-02857-2
dc.identifier.urihttps://hdl.handle.net/20.500.12491/10592
dc.identifier.volume31en_US
dc.identifier.wosWOS:000514597300039en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorLök, Ramazan
dc.institutionauthorBudak, Erhan
dc.institutionauthorYılmaz, Ercan
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal Of Materials Science-Materials In Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectNd2O3en_US
dc.titleStructural characterization and electrical properties of Nd2O3 by sol-gel methoden_US
dc.typeArticleen_US

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