Structural characterization and electrical properties of Nd2O3 by sol-gel method
Yükleniyor...
Dosyalar
Tarih
2020
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In the current study, Neodymium oxide (Nd2O3) was prepared by sol-gel method and deposited on P-type < 100 > silicon wafer. The chemical characterization of samples was done by Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive spectra (EDS) and atomic force microscopy (AFM). Nd-O bond formation was proven by FTIR, also cubic- Nd2O3 (c-Nd2O3) phase was detected by XRD. According to EDS analysis, neodymium concentration was approximately 59.41% while oxygen concentration was calculated as 10.21%. The amount of excess oxygen was 9.45% was originated by cristobalite formation. In addition, electrical characterizations of Nd2O3/p-Si MOS capacitor was performed by capacitance-voltage (C-V), conductance-voltage G/omega-V measurements at different frequencies between 250 kHz and 1 MHz. The maximum value of measured capacitance-voltage (C-V) and conductance-voltage (G/omega-V) was increased with decreasing in the applied voltage frequencies and after series resistance (R-s) correction, the measured C-V and G/omega-V characteristics, G/omega behavior started to decrease with rising the frequencies. According to the observed frequency dispersion, the deposited Nd2O3 on P-type < 100 & rang; silicon exhibits stable insulation property for future microelectronic applications.
Açıklama
Anahtar Kelimeler
Nd2O3
Kaynak
Journal Of Materials Science-Materials In Electronics
WoS Q Değeri
Q3
Scopus Q Değeri
Q2
Cilt
31
Sayı
4
