Fabrication of p-type CuSCN/n-type micro-structured ZnO heterojunction structures

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dc.authorid0000-0003-2932-1695en_US
dc.authorid0000-0003-4121-9343en_US
dc.authorid0000-0002-3006-4473en_US
dc.authorid0000-0002-5134-0246en_US
dc.authorid0000-0002-0041-273X
dc.contributor.authorBacaksız, Emin
dc.contributor.authorAksu, S.
dc.contributor.authorÇankaya, Güven
dc.contributor.authorYılmaz, S.
dc.contributor.authorPolat, İ.
dc.contributor.authorVarilci, Ahmet
dc.date.accessioned2021-06-23T19:28:14Z
dc.date.available2021-06-23T19:28:14Z
dc.date.issued2011
dc.departmentBAİBÜ, Fen Edebiyat Fakültesi, Fizik Bölümüen_US
dc.description.abstractMicro-sized ZnO rods on a SnO2 coated glass substrate were obtained by the spray pyrolysis method. Then a p-type CuSCN layer was deposited on this micro-sized n-ZnO to produce a p-n heterojunction. Temperature dependent current-voltage characteristics were measured in the temperature range 150-300 K with a step of 25 K. The current-voltage characteristics exhibit electrical rectification behavior. The zero bias barrier height Phi(b0) increases and the ideality factor n decreases with an increase in temperature. The apparent Richardson constant and mean barrier height were found to be 0.0028 A cm(-2) K-2 and 0.228 eV respectively in the range 150-300 K. After a barrier height inhomogeneity correction, the Richardson constant and the mean barrier height were obtained as 6520 A cm(-2) K-2 and 0.840 eV, respectively. (C) 2011 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.tsf.2011.01.254
dc.identifier.endpage3685en_US
dc.identifier.issn0040-6090
dc.identifier.issue11en_US
dc.identifier.scopus2-s2.0-79952740260en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage3679en_US
dc.identifier.urihttps://doi.org/10.1016/j.tsf.2011.01.254
dc.identifier.urihttps://hdl.handle.net/20.500.12491/6979
dc.identifier.volume519en_US
dc.identifier.wosWOS:000289333400041en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorVarilci, Ahmet
dc.language.isoenen_US
dc.publisherElsevier Science Saen_US
dc.relation.ispartofThin Solid Filmsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectZnO Micro-rodsen_US
dc.subjectCuSCN/n-ZnOen_US
dc.subjectHeterojunctionen_US
dc.subjectElectrical Propertiesen_US
dc.titleFabrication of p-type CuSCN/n-type micro-structured ZnO heterojunction structuresen_US
dc.typeArticleen_US

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