Fabrication of p-type CuSCN/n-type micro-structured ZnO heterojunction structures
Yükleniyor...
Dosyalar
Tarih
2011
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Science Sa
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Micro-sized ZnO rods on a SnO2 coated glass substrate were obtained by the spray pyrolysis method. Then a p-type CuSCN layer was deposited on this micro-sized n-ZnO to produce a p-n heterojunction. Temperature dependent current-voltage characteristics were measured in the temperature range 150-300 K with a step of 25 K. The current-voltage characteristics exhibit electrical rectification behavior. The zero bias barrier height Phi(b0) increases and the ideality factor n decreases with an increase in temperature. The apparent Richardson constant and mean barrier height were found to be 0.0028 A cm(-2) K-2 and 0.228 eV respectively in the range 150-300 K. After a barrier height inhomogeneity correction, the Richardson constant and the mean barrier height were obtained as 6520 A cm(-2) K-2 and 0.840 eV, respectively. (C) 2011 Elsevier B.V. All rights reserved.
Açıklama
Anahtar Kelimeler
ZnO Micro-rods, CuSCN/n-ZnO, Heterojunction, Electrical Properties
Kaynak
Thin Solid Films
WoS Q Değeri
Q1
Scopus Q Değeri
Q2
Cilt
519
Sayı
11
