Frequency dependent gamma-ray irradiation response of Sm2O3 MOS capacitors

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dc.authorid0000-0001-8152-9122en_US
dc.authorid0000-0002-6652-4662
dc.authorid0000-0001-7830-6243
dc.contributor.authorKaya, Şenol
dc.contributor.authorYılmaz, Ercan
dc.contributor.authorKahraman, Ayşegül
dc.contributor.authorKaraçalı, Hüseyin
dc.date.accessioned2021-06-23T19:41:56Z
dc.date.available2021-06-23T19:41:56Z
dc.date.issued2015
dc.departmentBAİBÜ, Rektörlük, Nükleer Radyasyon Dedektörleri Uygulama ve Araştırma Merkezien_US
dc.description.abstractThe frequency dependent irradiation influences on Sm2O3 MOS capacitors have been investigated and possible use of Sm2O3 in MOS-based radiation sensor was discussed in this study. To examine their gamma irradiation response over a range of doses, the fabricated MOS capacitors were irradiated up to 30 grays. Capacitance-Voltage (C-V) measurements were recorded for various doses and the influences of irradiation were determined from the mid-gap and flat-band voltage shifts. In addition, the degradations of irradiation have been studied by impedance based leakage current-voltage (J-V) characteristics. The results demonstrate that J-V characteristics have not been significantly change by irradiation and implying that the excited traps have a minor effect on current for given dose ranges. However, the frequency of applied voltage during. the C-V measurements affects the irradiation response of devices, significantly. The variations on the electrical characteristics may be attributed to the different time dependency of acceptor and donor-like interface states. In spite of the variations on the device characteristics, low frequency measurements indicate that Sm2O3 is a potential candidate to be used as a dielectric layer in MOS based irradiation sensors. (C) 2015 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.nimb.2015.06.037
dc.identifier.endpage193en_US
dc.identifier.issn0168-583X
dc.identifier.issn1872-9584
dc.identifier.scopus2-s2.0-84934783588en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage188en_US
dc.identifier.urihttps://doi.org/10.1016/j.nimb.2015.06.037
dc.identifier.urihttps://hdl.handle.net/20.500.12491/8240
dc.identifier.volume358en_US
dc.identifier.wosWOS:000359170800030en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorKaya, Şenol
dc.institutionauthorYılmaz, Ercan
dc.institutionauthorKaraçalı, Hüseyin
dc.institutionauthorKahraman, Ayşegül
dc.language.isoenen_US
dc.publisherElsevier Science Bven_US
dc.relation.ispartofNuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atomsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSm2O3 MOS Capacitorsen_US
dc.subjectIrradiation Effectsen_US
dc.subjectInterface Statesen_US
dc.subjectOxide Trapped Chargesen_US
dc.titleFrequency dependent gamma-ray irradiation response of Sm2O3 MOS capacitorsen_US
dc.typeArticleen_US

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