Post-deposition annealing effect on the structural and electrical properties of ytterbium oxide as an alternative gate dielectric

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dc.authorid0000-0002-9573-5805en_US
dc.authorid0000-0002-1836-7033en_US
dc.authorid0000-0002-6652-4662en_US
dc.contributor.authorMorkoç, Berk
dc.contributor.authorKahraman, Ayşegül
dc.contributor.authorYılmaz, Ercan
dc.date.accessioned2023-07-24T11:36:25Z
dc.date.available2023-07-24T11:36:25Z
dc.date.issued2022en_US
dc.departmentBAİBÜ, Fen Edebiyat Fakültesi, Fizik Bölümüen_US
dc.descriptionThis work is supported by the Scientific and Technological Research Council of Turkey (TUBITAK) under ARDEB1001-Scientific and Technological Research Projects Support Program (Contract Number: 117R054) and the Presidency of Strategy and Budget of the Presidency of Republic of Turkey (Contract Number: 2016K122834).en_US
dc.description.abstractThe possibility of ytterbium(III) oxide, one of the rare earth oxides, to replace silicon dioxide used as the gate dielectric is discussed in this article. For such a replacement, it is primarily necessary to understand the physical and chemical characteristics of ytterbium(II) oxide as a candidate, such as bond structure, electronic structure, band offsets with Si, dielectric constant, interfacial states and defect behavior. The effects of structural and electrical features of ytterbium(III) oxide-based MOS capacitors on device performance are investigated. The electron beam physical vapor deposition (EBPVD) technique was used for the deposition of ytterbium(III) oxide thin films. The 122 nm thick Yb2O3 thin film was annealed at four different temperatures (200 degrees C, 400 degrees C, 600 degrees C, and 800 degrees C) in nitrogen environment. The crystallite size determined from the as-deposited sample as 15 nm is the lowest. As expected, crystallite sizes increased as a result of increasing annealing temperature. The presence of Yb2+ oxidation states increased in the region close to the interface or at the interface. The binding energies of the Yb 4d and O 1s spectra increased with increasing depth into the films. In the O 1s spectra, the organic bonds on the surface first decreased and then increased with increasing annealing temperature. Silicate formation at the interface was determined for the annealed samples. This affected the electrical performance of the capacitors. The calculated dielectric values range from 12.1 to 15.8. Interface level densities were found in the order of 10(12) cm(-2) and it did not exhibit frequency-dependent behavior. The calculated values for the effective charge densities varied between -24.19x10(11) - 7.03x10(11) cm(-2). It has been determined that mostly negative charges are trapped more for different capacitors. Finally, Fermi energy level, dopant concentration, diffusion potential and barrier heights were calculated.en_US
dc.description.sponsorshipScientific and Technological Research Council of Turkey (TUBITAK) [117R054]; Presidency of Strategy and Budget of the Presidency of Republic of Turkey [2016K122834]en_US
dc.identifier.citationMorkoc, B., Kahraman, A., & Yilmaz, E. (2022). Post-deposition annealing effect on the structural and electrical properties of ytterbium oxide as an alternative gate dielectric. Materials Chemistry and Physics, 292, 126875.en_US
dc.identifier.doi10.1016/j.matchemphys.2022.126875
dc.identifier.endpage17en_US
dc.identifier.issn0254-0584
dc.identifier.issn1879-3312
dc.identifier.scopus2-s2.0-85139595595en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage1en_US
dc.identifier.uri10.1016/j.matchemphys.2022.126875
dc.identifier.urihttps://hdl.handle.net/20.500.12491/11342
dc.identifier.volume292en_US
dc.identifier.wosWOS:000873971000005en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorYılmaz, Ercan
dc.language.isoenen_US
dc.publisherElsevier Science SAen_US
dc.relation.ispartofMaterials Chemistry and Physicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectRare-earth Oxidesen_US
dc.subjectHigh-k Dielectricsen_US
dc.subjectEBPVDen_US
dc.subjectThin Filmsen_US
dc.subjectMOS Capacitoren_US
dc.subjectInterface Statesen_US
dc.titlePost-deposition annealing effect on the structural and electrical properties of ytterbium oxide as an alternative gate dielectricen_US
dc.typeArticleen_US

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