Study of the semiconducting behavior in zr-doped Bi1.95Sr1.65La0.4CuO6+& delta; ceramic cuprates

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dc.authorid0000-0002-3133-5693en_US
dc.contributor.authorBoudjaoui, S.
dc.contributor.authorMahamdioua, N.
dc.contributor.authorAltıntaş, Sevgi Polat
dc.date.accessioned2023-08-15T10:30:24Z
dc.date.available2023-08-15T10:30:24Z
dc.date.issued2023en_US
dc.departmentBAİBÜ, Fen Edebiyat Fakültesi, Fizik Bölümüen_US
dc.description.abstractThe effect of zirconium substitution on copper sites in ceramic cuprates of the Bi1.95Sr1.65La0.4Cu1-xZrxO6+& delta; system, where x = 0.0, 0.2, and 0.4, on the structural and superconducting properties has been examined. Undoped and Zr-doped samples were synthesized using the traditional solid-state reaction technique. The x-ray diffraction analysis showed that the phase in the undoped sample is recognized as the Raveau phase, also known as a phase R-2201 superconductor, whereas it totally transforms to phase I, also known as a phase I-2201 semiconductor, in the Zr-doped samples. Electrical resistivity measurements using the four-probe method show a superconductor state in the undoped sample below T-C,T-Onset = 35 K. In the Zr-doped samples, the results demonstrate that superconductivity is suppressed, and a semi-conducting behavior is shown. The loss of superconductivity in the system may be attributed to the excess oxygen intercalation in the Bi-O double layers and to the localization of the charge carriers. The transport process in the Zr-doped samples is followed by a two-dimensional variable range hopping conduction.en_US
dc.identifier.citationBoudjaoui, S., Mahamdioua, N., & Altintas, S. P. (2023). Study of the Semiconducting Behavior in Zr-Doped Bi1. 95Sr1. 65La0. 4CuO6+ δ Ceramic Cuprates. Journal of Electronic Materials, 1-7.en_US
dc.identifier.doi10.1007/s11664-023-10570-z
dc.identifier.endpage6253en_US
dc.identifier.issn0361-5235
dc.identifier.issn1543-186X
dc.identifier.scopus2-s2.0-85164166049en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage6247en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s11664-023-10570-z
dc.identifier.urihttps://hdl.handle.net/20.500.12491/11527
dc.identifier.volume52en_US
dc.identifier.wosWOS:001025887200001en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorAltıntaş, Sevgi Polat
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Electronic Materialsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectBi-2201 Phaseen_US
dc.subjectCarrier Localizationen_US
dc.subjectSuperconductivityen_US
dc.subjectSemiconducting Behavioren_US
dc.subject2D-VRH Mechanismen_US
dc.subjectBSCCO Systemen_US
dc.titleStudy of the semiconducting behavior in zr-doped Bi1.95Sr1.65La0.4CuO6+& delta; ceramic cupratesen_US
dc.typeArticleen_US

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