Radiation response of zirconium silicate P-MOS capacitor

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dc.authorid0000-0002-6476-8639en_US
dc.authorid0000-0002-6652-4662
dc.contributor.authorLök, Ramazan
dc.contributor.authorBudak, Erhan
dc.contributor.authorYılmaz, Ercan
dc.date.accessioned2021-06-23T19:54:11Z
dc.date.available2021-06-23T19:54:11Z
dc.date.issued2020
dc.departmentBAİBÜ, Rektörlük, Nükleer Radyasyon Dedektörleri Uygulama ve Araştırma Merkezien_US
dc.description.abstractThe chemical bonding of zirconium silicate films were examined by FTIR. The capacitance-voltage (C-V) measurements before and after irradiation were performed at high frequency. Furthermore, significant changes were observed depending on the radiation dose of the oxide traps and the intensity of the interface state. The sensitivity of this MOS capacitor is 4.3, 31.3 and 15.6 times less sensitive compared to the same thickness as Sm2O3, Al2O3 and Gd2O3. Therefore, it can be used as radiation-resistant material in nuclear reactors and space applications due to its stable electrical characteristics compared to other defined dielectrics. Interface states, (Nit) Barrier potential (Phi(b)) and oxide traps (Not) have also been investigated depending on the radiation effects. Ob is one of these important electrical properties. Phi(b) values decreased with increasing in radiation dose. Besides, radiation and frequency dependent dielectric constant (epsilon'), dielectric loss (epsilon '') and dielectric loss tangent (tan delta) and conductivity (sigma(ac)) of zirconium silicate were investigated. It is concluded that high-k zirconium Silicate is suitable for electronics applications in radiation harsh environment.en_US
dc.identifier.doi10.1016/j.microrel.2020.113663
dc.identifier.issn0026-2714
dc.identifier.scopus2-s2.0-85089482319en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1016/j.microrel.2020.113663
dc.identifier.urihttps://hdl.handle.net/20.500.12491/10454
dc.identifier.volume109en_US
dc.identifier.wosWOS:000534415700020en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorLök, Ramazan
dc.institutionauthorBudak, Erhan
dc.institutionauthorYılmaz, Ercan
dc.language.isoenen_US
dc.publisherPergamon-Elsevier Science Ltden_US
dc.relation.ispartofMicroelectronics Reliabilityen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectZrSiO4 MOS Capacitorsen_US
dc.subjectDielectric Propertiesen_US
dc.subjectRadiation Effectsen_US
dc.subjectInterface Statesen_US
dc.subjectOxide Trapped Chargesen_US
dc.subjectBarrier Heightsen_US
dc.titleRadiation response of zirconium silicate P-MOS capacitoren_US
dc.typeArticleen_US

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