Current-voltage characteristics of nano whisker ZnO/Si heterojunction under UV exposition

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dc.authorid0000-0002-2752-9671en_US
dc.authorid0000-0002-3133-5693en_US
dc.authorid0000-0001-9063-3028en_US
dc.authorid0000-0002-4214-9159en_US
dc.authorid0000-0003-4740-1138en_US
dc.authorid0000-0001-7066-1566en_US
dc.contributor.authorKoç, Nevin Soylu
dc.contributor.authorAltıntaş, Sevgi Polat
dc.contributor.authorGökçen, Muharrem
dc.contributor.authorDoğruer, Musa
dc.contributor.authorAltuğ, Cevher
dc.contributor.authorVarilci, Ahmet
dc.date.accessioned2024-01-22T11:33:12Z
dc.date.available2024-01-22T11:33:12Z
dc.date.issued2022en_US
dc.departmentBAİBÜ, Fen Edebiyat Fakültesi, Fizik Bölümüen_US
dc.description.abstractIn/ZnO/p-Si heterojunction diode was produced to investigate the photo-responsivity and electrical features under ultraviolet (UV) light. A hydrothermal synthesis technique was used to coat the ZnO layer on the p-Si single crystal as nanowhisker/rods. The formation of surface and nanowhisker properties of the ZnO layer were investigated by scanning electron microscope (SEM). The I-V (current-voltage) analysis of the In/ZnO/p-Si diode was realized in dark and under UV (290-400 nm) illumination. Further, the main electrical parameters of the diode; such as reverse bias saturation current (I-V), ideality factor (n), zero bias barrier height (Phi(Bo)), resistance (R) and interface state density (N-ss) were obtained from the experimental I-V measurements by thermionic emission (TE) and Card and Rhoderick's function. Also, the power law of the photocurrents (I-PC), photoresponsivity (PR) and response time were extracted. Photo-responsivity and response time values of In/ZnO/p-Si heterojunction diode were obtained as 2.0 A/W and (rise/decay) 160/200 ms, respectively.en_US
dc.identifier.citationKoc, N. S., Altintas, S. P., Gokcen, M., Dogruer, M., Altug, C., & Varilci, A. (2022). Current-voltage characteristics of nano whisker ZnO/Si heterojunction under UV exposition. Sensors and Actuators A: Physical, 342, 113618.en_US
dc.identifier.doi10.1016/j.sna.2022.113618
dc.identifier.endpage7en_US
dc.identifier.issn0924-4247
dc.identifier.issn1873-3069
dc.identifier.scopus2-s2.0-85130562238en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage1en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.sna.2022.113618
dc.identifier.urihttps://hdl.handle.net/20.500.12491/11963
dc.identifier.volume342en_US
dc.identifier.wosWOS:000807773200005en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorKoç, Nevin Soylu
dc.institutionauthorAltıntaş, Sevgi Polat
dc.institutionauthorDoğruer, Musa
dc.institutionauthorAltuğ, Cevher
dc.institutionauthorVarilci, Ahmet
dc.language.isoenen_US
dc.publisherElsevier Science Saen_US
dc.relation.ispartofSensors and Actuators A-Physicalen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectZnO Nanorod/whiskeren_US
dc.subjectPhotodiodeen_US
dc.subjectUV Illuminationen_US
dc.subjectP-Si/ZnOen_US
dc.subjectPhoto-Responsivityen_US
dc.subjectThin-Filmen_US
dc.titleCurrent-voltage characteristics of nano whisker ZnO/Si heterojunction under UV expositionen_US
dc.typeArticleen_US

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